Field effect transistor, content addressed memory cell
    8.
    发明授权
    Field effect transistor, content addressed memory cell 失效
    场效应晶体管,内容寻址存储单元

    公开(公告)号:US3575617A

    公开(公告)日:1971-04-20

    申请号:US3575617D

    申请日:1968-12-27

    Applicant: RCA CORP

    Inventor: BURNS JOSEPH R

    CPC classification number: G11C15/04 H03K3/356104

    Abstract: A field-effect transistor flip-flop and three lines coupled through other field effect transistors to the flip-flop for permitting information to be read from and written into the flipflop nondestructively and for producing, in response to a voltage indicative of a tag bit applied to one of said lines, a signal indicative of a match or mismatch on another of said lines. The invention described herein was made in the course of or under a contract or sub-contract thereunder with the Department of the Air Force.

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