发明授权
US3600799A Methods of fabrication of prewoven bit-wire memory matrix apparatus
失效
PREWOVEN BIT-WIRE MEMORY MATRIX设备的制造方法
- 专利标题： Methods of fabrication of prewoven bit-wire memory matrix apparatus
- 专利标题（中）： PREWOVEN BIT-WIRE MEMORY MATRIX设备的制造方法
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申请号： US3600799D申请日： 1969-07-16
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公开(公告)号： US3600799A公开(公告)日： 1971-08-24
- 发明人: DAVIS JOHN S
- 申请人： BUNKER RAMO
- 专利权人： Bunker Ramo Corp
- 当前专利权人： Bunker Ramo Corp
- 优先权： US86255969 1969-07-16
- 主分类号： G11C5/02
- IPC分类号： G11C5/02 ; H01F7/06
摘要：
A woven configuration of a bit-wire memory utilizes certain orthogonal filamentary elements to develop selectively positioned discontinuities in the layer of remanently magnetic material deposited on the bit-wires to limit domain wall travel during operation of the memory. Particular fabrication methods which arrange the various interwoven elements so as to provide selective masking which results in the desired discontinuities are disclosed.
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