摘要:
A woven configuration of a bit-wire memory utilizes certain orthogonal filamentary elements to develop selectively positioned discontinuities in the layer of remanently magnetic material deposited on the bit-wires to limit domain wall travel during operation of the memory. Particular fabrication methods which arrange the various interwoven elements so as to provide selective masking which results in the desired discontinuities are disclosed.
摘要:
A structure for providing circuit interconnections by means of a woven fabric. Special elements and techniques are employed to establish the individual wire-to-terminal or wire-to-wire connections within the structure and also those required for the attachment to external circuit modules. These external circuit modules have perpendicularly depending output terminals and are connected to the woven structure by providing corresponding float wire patterns for each module, the float wires being cut and bent to form aligned mating terminals for receiving the module terminals. In a particular embodiment connection to the external components is accomplished by providing the float wires as hollow tubular members within which the module terminals are respectively inserted.