Invention Grant
- Patent Title: Method for the fabrication of discrete rc structure
- Patent Title (中): 用于制造离散RC结构的方法
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Application No.: US3607679DApplication Date: 1969-05-05
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Publication No.: US3607679APublication Date: 1971-09-21
- Inventor: MELROY DAVID O , ORR WILLIAM H , PELLETIER FRANK P , YOCOM WILLIS H
- Applicant: BELL TELEPHONE LABOR INC
- Assignee: Nokia Bell Labs
- Current Assignee: Nokia Bell Labs
- Priority: US82184469 1969-05-05
- Main IPC: H01C17/12
- IPC: H01C17/12 ; H01G4/40 ; H01L49/02 ; C23B5/48 ; C23C15/00 ; C23F17/00
Abstract:
A technique for the fabrication of tantalum-based resistors and capacitors on a single substrate involves a series of process steps wherein an anodic tantalum oxide film initially formed on areas destined for use as either resistors or capacitors serves as an etch stop when removing subsequently deposited tantalum components therefrom.
Information query
