Invention Grant
- Patent Title: Semiconductor having tin oxide layer and substrate
- Patent Title (中): 具有氧化钛层和衬底的半导体
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Application No.: US3679949DApplication Date: 1970-09-23
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Publication No.: US3679949APublication Date: 1972-07-25
- Inventor: UEKUSA GENZO , TANIMURA SHIGERU , HIGASHI KAZUHIRO , SUMOTO TAKAO
- Applicant: OMRON TATEISI ELECTRONICS CO
- Assignee: Omron Tateisi Electronics Co
- Current Assignee: Omron Tateisi Electronics Co
- Priority: JP7648369 1969-09-24; JP7719269 1969-09-26
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L27/144 ; H01L3/00 ; H01L15/06
Abstract:
A semiconductor composite having a rectifying characteristic is provided by depositing a tin oxide film on a semiconductor substrate. In view of the fact that the tin oxide film has high transparency and conductivity the composite can be used as an excellent photoelectric device. Preferably the tin oxide film is deposited on the substrate by reacting a halogenated organic tin compound with oxygen at an elevated temperature. Conductivity of the tin oxide film can be enhanced by incorporation of a small amount of antimony trichloride into the dimethyl tin dichloride. It was found that there are preferred reaction temperatures, time periods, and amount of mixed antimony trichloride for providing a composite having the desired characteristics. By depositing a plurality of separate tin oxide films on a single substrate by a photo-etching process of tin oxide film an integrated photoelectric apparatus is provided.
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