公开(公告)号：US3679949A

公开(公告)日：1972-07-25

申请号：US3679949D

申请日：1970-09-23

Applicant: OMRON TATEISI ELECTRONICS CO

Inventor： UEKUSA GENZO ,  TANIMURA SHIGERU ,  HIGASHI KAZUHIRO ,  SUMOTO TAKAO

IPC: H01L21/285 ,  H01L27/144 ,  H01L3/00 ,  H01L15/06

CPC classification number: H01L21/28537 ,  H01L21/28581 ,  H01L27/1446

Abstract: A semiconductor composite having a rectifying characteristic is provided by depositing a tin oxide film on a semiconductor substrate. In view of the fact that the tin oxide film has high transparency and conductivity the composite can be used as an excellent photoelectric device. Preferably the tin oxide film is deposited on the substrate by reacting a halogenated organic tin compound with oxygen at an elevated temperature. Conductivity of the tin oxide film can be enhanced by incorporation of a small amount of antimony trichloride into the dimethyl tin dichloride. It was found that there are preferred reaction temperatures, time periods, and amount of mixed antimony trichloride for providing a composite having the desired characteristics. By depositing a plurality of separate tin oxide films on a single substrate by a photo-etching process of tin oxide film an integrated photoelectric apparatus is provided.

Abstract translation: 通过在半导体衬底上沉积氧化锡膜来提供具有整流特性的半导体复合体。 考虑到氧化锡膜具有高的透明度和导电性，复合材料可以用作优异的光电器件。

公开(公告)号：US3872490A

公开(公告)日：1975-03-18

申请号：US11933771

申请日：1971-02-26

Applicant: OMRON TATEISI ELECTRONICS CO

Inventor： HIGASHI KAZUHIRO ,  TAGUCHI ISAO ,  MIURA NOBUAKI

IPC: H01L21/00 ,  H01L29/00 ,  H01L29/84 ,  H01L31/00 ,  H01L11/00 ,  H01L15/00

CPC classification number: H01L29/84 ,  H01L21/00 ,  H01L29/00 ,  H01L31/00

Abstract: A semiconductive mechanical-electrical transducer is obtained by providing a mechanical force applying means on a semiconductor composite comprising a tin oxide film deposited on a semiconductor substrate and having a barrier having a rectifying characteristic therebetween. Preferably the main surface of the substrate comprises a projection, at a top of which is deposited an insulation layer, and the tin oxide film is deposited on the main surface of the substrate, whereby the barrier having a rectifying characteristic is formed in a bevel portion of the projection. It was discovered that in such an embodiment the shearing stress is applied to the barrier, when the mechanical force is applied to the composite, in which case the conversion efficiency of the energy is enhanced as compared with a case where the main surface is a plane surface.

Abstract translation: 通过在半导体复合体上设置机械力施加装置，形成半导体机电传感器，所述半导体复合体包括沉积在半导体衬底上的具有整流特性的阻挡层的氧化锡膜。