公开(公告)号：US3530299A

公开(公告)日：1970-09-22

申请号：US3530299D

申请日：1966-08-19

Applicant: INT STANDARD ELECTRIC CORP

Inventor： SANDBANK CARL PETER ,  STRAIN ROBERT JOSEPH

IPC: G02F2/00 ,  H01L31/00 ,  H01L31/02 ,  H01L15/06

CPC classification number: H01L31/02019 ,  G02F2/002 ,  H01L31/00

公开(公告)号：US3522435A

公开(公告)日：1970-08-04

申请号：US3522435D

申请日：1968-01-18

Applicant: BALDWIN CO D H

Inventor： BREAN JOHN ,  LAMPKIN CURT M

IPC: H01L27/144 ,  H03K17/78 ,  H03M1/00 ,  H01L15/06

CPC classification number: H01L27/1443 ,  H03K17/78 ,  H03M1/30

公开(公告)号：US3476990A

公开(公告)日：1969-11-04

申请号：US3476990D

申请日：1967-04-12

Applicant: PHILIPS CORP

Inventor： EIGEMAN JACOBUS ,  TUINHOF ANTON DIRK

IPC: H01L23/04 ,  H01L23/20 ,  H01L23/495 ,  H01L23/552 ,  H01L11/02 ,  H01L15/06

CPC classification number: H01L23/552 ,  H01L23/041 ,  H01L23/20 ,  H01L23/49541 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/01019 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/12036 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

公开(公告)号：US3461296A

公开(公告)日：1969-08-12

申请号：US3461296D

申请日：1964-04-10

Applicant: ENERGY CONVERSION DEVICES INC

Inventor： OVSHINSKY STANFORD R

IPC: G05F1/10 ,  H01L15/06 ,  H01J39/12

CPC classification number: G05F1/10

公开(公告)号：US3892961A

公开(公告)日：1975-07-01

申请号：US45255074

申请日：1974-03-19

Applicant: INTERMADOX A G

Inventor： BACHMANN HANS

IPC: G01R17/20 ,  G01J1/24 ,  G05B11/01 ,  H01L31/16 ,  G01J1/32 ,  H01L15/06

CPC classification number: G05B11/017 ,  G01J1/24

Abstract: The arrangement includes a light source and a photosensitive unit positioned to receive light from the light source and operative for generating an electrical output signal having a magnitude dependent upon the luminous flux received from the light source. A light-blocking arrangement, for example in the form of a film strip, is positioned intermediate the light source and the photosensitive unit, and is mounted for displacement relative to the photosensitive unit and light source in a predetermined direction along a predetermined path. The light transmittance of the light-blocking arrangement varies in said predetermined direction, so that as the light-blocking arrangement is displaced in said direction the luminous flux received by the photosensitive unit from the light source will vary accordingly. A compensating arrangement establishes a linear relationship between the displacement of the light-blocking arrangement and the magnitude of the light-dependent signal, by automatically varying the luminous flux emitted from the light source towards the photosensitive unit in dependence upon the position of the light-blocking arrangement.

Abstract translation: 该装置包括光源和感光单元，其定位成从光源接收光，并用于产生具有取决于从光源接收的光通量的幅度的电输出信号。 例如以薄膜条形式的遮光装置位于光源和感光单元之间，并且被安装成沿着预定路径沿着预定方向相对于感光单元和光源移位。 遮光装置的透光率在所述预定方向上变化，使得当光阻装置在所述方向上移位时，感光单元从光源接收的光通量将相应地变化。 补偿装置通过根据发光元件的位置自动地改变从光源发射到光敏单元的光通量，从而建立遮光装置的位移与光依赖信号的大小之间的线性关系。 阻塞安排。

公开(公告)号：US3761326A

公开(公告)日：1973-09-25

申请号：US3761326D

申请日：1971-05-20

Applicant: FAIRCHILD CAMERA INSTR CO

Inventor： WECKLER G

IPC: H01L27/07 ,  H01L27/144 ,  H01L5/00 ,  H01L7/64 ,  H01L15/06

CPC classification number: H01L27/0761 ,  H01L27/1443 ,  Y10S148/051 ,  Y10S148/145

Abstract: THE FABRICATION OF TWO SEMICONDUCTOR STRUCTURES SUCH AS A HIGH SPEED, OPTINUM SENSITIVITY PHOTODIODE AND A MAXIMUM GAIN-BANDWIDTH TRANSISTOR ON THE SAME WAFER IS DESCRIBED. A THIN, LOW RESISTIVITY LAYER IS FORMED ON A HIGHER RESISTIVITY SUBSTRATE AND THE DIODE JUNCTION IS THEN FORMED IN ONE PART OF THE WAFER BY DIFFUSING THE JUNCTIONFORMING REGION THROUGH THE LAYER AND DOWN INTO THE SUBSTRATE. THIS PROVIDES A DIODE OF LOW CAPACITANCE AND OPTIMUM LIGHT SENSITIVITY. THE TRANSISTOR IS THEN FORMED IN ANOTHER PART OF THE SAME WAFER BY FIRST DIFFUSING THE BASE-COLLECTOR JUNCTION INTO THE THIN LAYER FOLLOWED BY A DIFFUSION THEREIN OF THE EMITTER-BASE JUNCTION. THIS DIFFUSION INTO THE LAYER IS VERY SHALLOW AND RESULTS IN A HIGH GAIN-BANDWIDTH TRANSISTOR. THE PHOTODIODE STRUCTURE IS AFFECTED VERY LITTLE BY THE PROCESSING REQUIRED TO FORM THE TRANSISTOR, THUS ALLOWING EACH STRUCTURE TO BE INDEPENDENTLY OPTIMIZED.

公开(公告)号：US3453435A

公开(公告)日：1969-07-01

申请号：US3453435D

申请日：1967-05-18

Applicant: BELL TELEPHONE LABOR INC

Inventor： GOETZBERGER ADOLF

IPC: H01L31/02 ,  H01L31/107 ,  H01J39/12 ,  H01L15/06

CPC classification number: H01L31/02027 ,  H01L31/107

公开(公告)号：US3440497A

公开(公告)日：1969-04-22

申请号：US3440497D

申请日：1965-08-02

Applicant: IBM

Inventor： KEYES ROBERT W ,  WEISER KURT

IPC: H01L21/00 ,  H01L33/00 ,  H01L15/06

CPC classification number: H01L33/0029 ,  H01L21/00 ,  H01L33/00 ,  Y10S148/002 ,  Y10S148/107

公开(公告)号：US3430050A

公开(公告)日：1969-02-25

申请号：US3430050D

申请日：1965-02-15

Applicant: PHILIPS CORP

Inventor： GRIMMEISS HERMANN GEORG

IPC: H01L27/00 ,  H01L31/00 ,  H01L31/167 ,  H01L15/06 ,  H01J39/12

CPC classification number: H01L31/00 ,  H01L27/00 ,  H01L31/167

公开(公告)号：US3689900A

公开(公告)日：1972-09-05

申请号：US3689900D

申请日：1970-08-31

Applicant: GEN ELECTRIC

Inventor： CHEN ARTHUR C M

IPC: G11C17/06 ,  H01L27/146 ,  H01L31/00 ,  G11C11/36 ,  G11C11/42 ,  H01L15/06

CPC classification number: H01L27/14643 ,  G11C17/06 ,  H01L31/00 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/135 ,  Y10S257/926

Abstract: A diode read only memory array is disclosed in which the intersecting signal lines of the array are connected by a series circuit comprising a conventional diode and a photodiode, oppositely poled. Information is stored by selectively irradiating the array to produce reverse conduction in selected ones of the photodiodes. The integrated circuit structure used in fabricating the memory array is also disclosed.

Abstract translation: 公开了二极管只读存储器阵列，其中阵列的相交信号线由包括相对极化的常规二极管和光电二极管的串联电路连接。 通过选择性地照射阵列以在所选择的光电二极管中产生反向传导来存储信息。 还公开了用于制造存储器阵列的集成电路结构。