发明授权
- 专利标题: Zener diode for monolithic integrated circuits
- 专利标题(中): 用于单片集成电路的ZENER二极管
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申请号: US3735210D申请日: 1971-06-07
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公开(公告)号: US3735210A公开(公告)日: 1973-05-22
- 发明人: KALISH I , KHAJEZADEH H
- 申请人: RCA CORP
- 专利权人: RCA Corp
- 当前专利权人: RCA Corp
- 优先权: US15079571 1971-06-07
- 主分类号: H01L27/00
- IPC分类号: H01L27/00 ; H01L29/866 ; H01L9/00
摘要:
An improved zener diode for monolithic integrated circuits includes a first diffused region of one type conductivity having two portions, one of which portions has a significantly higher maximum impurity concentration than the other portion. A second diffused region of opposite type high conductivity is disposed within both portions of the first region and is separated from each by a PN junction, the PN junction between the second region and the lower conductivity portion being at a significantly greater depth than the PN junction between the second region and the high impurity concentration portion. The electrical contact to the second region is made only over the lower impurity concentration portion where the PN junction is at a significantly greater depth.
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