公开(公告)号：US08420437B1

公开(公告)日：2013-04-16

申请号：US13311063

申请日：2011-12-05

申请人： Wen-Jeng Fan

发明人： Wen-Jeng Fan

IPC分类号： H01L9/00 ,  H01L21/00

CPC分类号： H01L23/552 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Disclosed is a method for forming an EMI shielding layer on all surfaces of a semiconductor package in order to enhance EMI shielding effect on all surfaces and to prevent electrical short to external terminals of the semiconductor package. According to the method, a temporary protective layer is formed on the external terminals where the temporary protective layer is further in contact with a plurality of annular surface regions of the semiconductor package surrounding and adjacent to the external terminals. Then, the EMI shielding layer is formed on the top surface, the bottom surface and the side surfaces of the semiconductor package without forming on the external terminals.

摘要翻译： 公开了一种用于在半导体封装的所有表面上形成EMI屏蔽层的方法，以便增强对所有表面的EMI屏蔽效果，并防止对半导体封装的外部端子的电短路。 根据该方法，在外部端子上形成临时保护层，其中临时保护层与外部端子周围和邻近的半导体封装体的多个环形表面区域进一步接触。 然后，EMI屏蔽层形成在半导体封装的顶表面，底表面和侧表面上，而不形成在外部端子上。

公开(公告)号：US07461140B2

公开(公告)日：2008-12-02

申请号：US10741563

申请日：2003-12-19

申请人： Andrew J. Spry ,  James A. Lynn

发明人： Andrew J. Spry ,  James A. Lynn

IPC分类号： G06F15/177 ,  G06F15/16 ,  G06F17/00 ,  G06F7/04 ,  G06F17/30 ,  G06F7/58 ,  H04K1/00 ,  H01L9/00 ,  H01L9/32 ,  G06K9/00 ,  G06K19/00

CPC分类号： H04L63/102 ,  H04L29/12009 ,  H04L29/12207 ,  H04L61/20 ,  H04L63/164 ,  H04L67/1097

摘要： The present invention is directed to a method and apparatus for identifying IPsec security policy in iSCSI. In an exemplary aspect of the present invention, a method for identifying IPsec security policy in iSCSI includes the following steps. An IP address may be allocated to a physical port of an iSCSI network entity. The physical port may include at least one TCP listening port. For a discovery session, the IP address may be statically allocated (or permanently leased). For a normal session, the IP address may be statically allocated or DHCP assigned. A TCP listening port associated with the IP address in an iSCSI portal may then be used to link a security policy on an IP connection with iSCSI configuration.

摘要翻译： 本发明涉及用于识别iSCSI中的IPsec安全策略的方法和装置。 在本发明的示例性方面，用于识别iSCSI中的IPsec安全策略的方法包括以下步骤。 可以将IP地址分配给iSCSI网络实体的物理端口。 物理端口可以包括至少一个TCP侦听端口。 对于发现会话，IP地址可以静态分配（或永久租用）。 对于正常会话，可以静态分配IP地址或分配DHCP。 然后可以使用与iSCSI门户中的IP地址相关联的TCP侦听端口将IP连接上的安全策略与iSCSI配置相链接。

公开(公告)号：US07146504B2

公开(公告)日：2006-12-05

申请号：US10171269

申请日：2002-06-13

申请人： M. Jay Parks ,  Jonas Fredrik Helin

发明人： M. Jay Parks ,  Jonas Fredrik Helin

IPC分类号： H01L9/00

CPC分类号： G06F21/725

摘要： A computing device has a running real-time secure clock adjustable only according to trusted time as received from an external trusted time authority, a time offset within which is stored a time value adjustable by at least one of the user and the trusted time authority, and a time display for displaying a running real-time display time calculated as the trusted time from the secure clock plus the stored time value in the time offset. Reference thus may be made to the secure clock to evaluate a temporal requirement without concern that the user has adjusted the secure clock to subvert the temporal requirement. The computing device sends a request for secure time and the trusted time authority sends same. The computing device receives the secure time, sets the secure clock according to same, and sends confirmation to the trusted time authority that the secure time has been received.

公开(公告)号：US5982893A

公开(公告)日：1999-11-09

申请号：US90796

申请日：1998-06-04

申请人： Eric G. Hughes

发明人： Eric G. Hughes

IPC分类号： G06F1/00 ,  G06F17/30 ,  G06F21/00 ,  H04L9/32 ,  H04L29/06 ,  H01L9/00

CPC分类号： G06Q20/401 ,  H04L63/123 ,  H04L9/3236 ,  H04L9/3247 ,  H04L9/3297 ,  G06F17/30286 ,  H04L2209/20 ,  H04L2209/34 ,  H04L2209/56

摘要： A method of processing a transaction message is disclosed. The method includes receiving an incoming raw transport message. The raw transport message is stored in a channel interface database. A raw message identifier is generated. The raw message identifier is determined such that the raw message identifier verifiably identifies the raw message. A communications context identifier is generated. The communications context identifier is determined such that the communications context identifier verifiably identifies the raw message and the channel. The raw message is converted into a transaction message and the transaction message is validated.

摘要翻译： 公开了一种处理交易消息的方法。 该方法包括接收进入的原始传输消息。 原始传输消息存储在通道接口数据库中。 生成原始消息标识符。 确定原始消息标识符，使得原始消息标识符可验证地标识原始消息。 生成通信上下文标识符。 确定通信上下文标识符，使得通信上下文标识符可验证地识别原始消息和信道。 原始消息被转换为事务消息，并且事务消息被验证。

公开(公告)号：US3932761A

公开(公告)日：1976-01-13

申请号：US524695

申请日：1974-11-18

申请人： Hubert J. Ramsey ,  Samuel M. Stone ,  Joseph Zucker

发明人： Hubert J. Ramsey ,  Samuel M. Stone ,  Joseph Zucker

IPC分类号： G02B6/42 ,  H01L9/00

CPC分类号： G02B6/421

摘要： A fiber coupled light emitting diode module is provided which may be utilized for plug-in incorporation into a fiber optical communications system and for easy connection to a driving voltage source. Means are included in the module for facilitating manufacture since the location of the light emitting diode is not critical within the device and the device may be operated efficiently since the heat which is generated at the light emitting diode is conducted away to the exterior of the module for dissipation.

摘要翻译： 提供了一种光纤耦合的发光二极管模块，其可以用于插入并入到光纤通信系统中并且便于连接到驱动电压源。 由于发光二极管的位置在器件内不是关键的，因此器件可以被有效地操作，因为在发光二极管处产生的热被传导到模块的外部 为了消散。

公开(公告)号：US3829880A

公开(公告)日：1974-08-13

申请号：US32140973

申请日：1973-01-05

申请人： WESTINGHOUSE ELECTRIC CORP

发明人： KRISHNA S

IPC分类号： H01L29/86 ,  H01L29/00 ,  H01L29/74 ,  H01L9/00

CPC分类号： H01L29/00

摘要： A plasma thyristor is provided for faster recycling of the plasma mode and sharper output signals. A silicon semiconductor body has a low impurity concentration preferably below 5 X 1014 atoms/cm3, has first and second opposed major surfaces, and preferably has a width of greater than about 80 microns. A first Schottky barrier contact is made at the first major surface. A second Schottky barrier or ohmic contact is made at the second major surface. Power sources apply (i) a reverse bias voltage across the first Schottky barrier contact between the contacts causing the carrier depletion field to extend from the first Schottky barrier contact the width of the body to the second contact, and (ii) a current pulse across the body between the contacts having a density greater than the saturation current density of the body. Preferably, the plasma thyristor is used to generate high power, fast rise-time electrical signals.

摘要翻译： 提供等离子体晶闸管，用于更快速地回收等离子体模式和更清晰的输出信号。 硅半导体本体具有优选低于5×10 14原子/ cm 3的低杂质浓度，具有第一和第二相对的主表面，并且优选具有大于约80微米的宽度。 第一个主表面上形成了第一个肖特基势垒接触。 在第二主表面上形成第二肖特基势垒或欧姆接触。 电源应用（i）触点之间的第一肖特基势垒接触处的反向偏置电压，导致载流子耗尽场从第一肖特基势垒接触到体的宽度到第二接触，以及（ii）跨过 触点之间的主体具有大于身体的饱和电流密度的密度。 优选地，等离子体晶闸管用于产生高功率，快速上升时间的电信号。

公开(公告)号：US3723830A

公开(公告)日：1973-03-27

申请号：US3723830D

申请日：1970-10-14

申请人： MOTOROLA INC

发明人： FREDERIKSEN T ,  LONG E

IPC分类号： H01L27/00 ,  H01L29/00 ,  H01L29/866 ,  H01L9/00

CPC分类号： H01L29/00 ,  H01L27/00 ,  H01L29/866

摘要： A low current, low noise avalanche diode is disclosed which can be provided on a semiconductor chip, in which a region of highly doped material of one conductivity type is produced in an epitaxial layer of material which is less highly doped and is of the same conductivity type, and at least one finger of such highly doped material extends from said highly doped region towards and makes a PN junction with a region of oppositely doped material. Contacts are applied to the two regions and act as the electrodes of the resultant diode.

摘要翻译： 公开了一种低电流，低噪声的雪崩二极管，其可以提供在半导体芯片上，其中一种导电类型的高掺杂材料的区域在材料的外延层中产生，该材料的外延层具有较低的掺杂并且具有相同的导电性 类型，并且这种高掺杂材料的至少一个指状物从所述高掺杂区域延伸并且与相对掺杂材料的区域形成PN结。 触点施加到两个区域并用作所得二极管的电极。

公开(公告)号：US3651384A

公开(公告)日：1972-03-21

申请号：US3651384D

申请日：1971-03-08

申请人： WARREN P WATERS ,  BYRON K LOVELACE

发明人： WATERS WARREN P ,  LOVELACE BYRON K

IPC分类号： H01L23/482 ,  H01L29/00 ,  H01L9/00

CPC分类号： H01L23/4824 ,  H01L29/00 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is disclosed a high-frequency metal semiconductor junction diode which comprises two layers of insulating material having different etching characteristics so that

摘要翻译： 公开了一种高频金属半导体结二极管，其包括具有不同蚀刻特性的两层绝缘材料，从而可以在氧化物中形成非常小的开口; 金属膜连接到所述小暴露区域以限定二极管结构

公开(公告)号：US3566219A

公开(公告)日：1971-02-23

申请号：US3566219D

申请日：1969-01-16

申请人： SIGNETICS CORP

发明人： NELSON CARROLL E ,  CAMENZIND HANS R ,  YOUMANS ALBERT P

IPC分类号： H01L21/762 ,  H01L29/00 ,  H01L29/8605 ,  H01L11/14 ,  H01L9/00

CPC分类号： H01L29/8605 ,  H01L21/76297 ,  H01L29/00 ,  Y10S148/051 ,  Y10S148/085

摘要： Pinched resistor semiconductor structure having a channel and a field plate to provide a depletion region which pinches off the channel so that the current flow remains constant for any voltage after a predetermined voltage is reached.

公开(公告)号：US3555374A

公开(公告)日：1971-01-12

申请号：US3555374D

申请日：1968-03-04

申请人： HITACHI LTD

发明人： USUDA KOJI

IPC分类号： H01L27/02 ,  H01L9/00 ,  H01L19/00

CPC分类号： H01L27/0255 ,  Y10S148/049 ,  Y10S148/053 ,  Y10S148/145

摘要： A SEMICONDUCTOR DEVICE COMPRISING A SEMICONDUCTOR ELEMENT HAVING AN INSULATED GATED ELECTRODE AND A PROTECTIVE DIODE REGION PROVIDED IN THE NEIGHBORHOOD OF THE SEMICONDUCTOR ELEMENT TO PROTECT THE GATE ELECTRODE FROM AKIELECTRIC BREAKDOWN; THE DIODE IS FORMED BY A LOW RESISTIVITY SEMICONDUCTOR MATERIAL TO REDUCE ITS INTERNAL RESISTANCE, THEREBY ACCELERATING THE ACTION OF THE PROTECTIVE DIODE SO THAT THE CLAMP ACTION OF THE DIODE OCCURS EARLIER THAN THE DIELECTRIC BREAKDOWN OF THE GATE ELECTRODE.