发明授权
US3947953A Method of making plastic sealed cavity molded type semi-conductor devices
失效
制造塑料密封腔模制型半导体器件的方法
- 专利标题： Method of making plastic sealed cavity molded type semi-conductor devices
- 专利标题（中）： 制造塑料密封腔模制型半导体器件的方法
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申请号： US499947申请日： 1974-08-23
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公开(公告)号： US3947953A公开(公告)日： 1976-04-06
- 发明人: Takeshi Okada , Sanenobu Sonoda , Katsumi Yamamoto , Masahiro Fujimori
- 申请人： Takeshi Okada , Sanenobu Sonoda , Katsumi Yamamoto , Masahiro Fujimori
- 申请人地址： JA Ibaragi
- 专利权人： Nitto Electric Industrial Co., Ltd.
- 当前专利权人： Nitto Electric Industrial Co., Ltd.
- 当前专利权人地址： JA Ibaragi
- 主分类号： H01L21/50
- IPC分类号： H01L21/50 ; H01L23/057 ; H01L23/10 ; H01L23/495 ; H01L23/498 ; H01L21/304 ; B29C6/02
摘要：
The external lead frame for a plastic sealed, cavity molded type semi-conductor device is formed of Phospor bronze, with the bronze lead frame liquid honed, it is pre-heated and supported in a mold cavity so as to be embedded into a powder epoxy resin molded header with improved sealing between the Phospor bronze lead frame in the header molded thereabove.
公开/授权文献
- USRE34000E Method of operating ion trap detector in MS/MS mode 公开/授权日：1992-07-21
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