发明授权
- 专利标题: Mesa type thyristor and its making method
- 专利标题(中): 梅萨式晶闸管及其制作方法
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申请号: US416799申请日: 1973-11-19
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公开(公告)号: US3961354A公开(公告)日: 1976-06-01
- 发明人: Masahiro Kuwagata , Masao Yamada , Kenichiro Nakamura , Yorisada Kawakami
- 申请人: Masahiro Kuwagata , Masao Yamada , Kenichiro Nakamura , Yorisada Kawakami
- 申请人地址: JA Osaka
- 专利权人: Matsushita Electronics Corporation
- 当前专利权人: Matsushita Electronics Corporation
- 当前专利权人地址: JA Osaka
- 优先权: JA47-115836 19721117
- 主分类号: H01L29/74
- IPC分类号: H01L29/74 ; H01L21/78 ; H01L29/00 ; H01L29/06 ; H01L29/747 ; H01L7/44
摘要:
An improved method of manufacturing a mesa type thyristor includes the formation, onto at least one face of a semiconductor substrate of a prescribed conductivity type of a ring or rings, of a deeply diffused region of the same conductivity type or that of the substrate but of a higher impurity concentration. As a result, the ring or rings of the deeply diffused region, surrounding the essential part of the thyristor, are, subsequent to the process of mesa-etching, exposed along the peripheral surface linking both faces of the substrate. The high-doped ring serves to effectively prevent an undesirable inducing of an inversion layer (i.e. channel region) across both surfaces of the substrate.
公开/授权文献
- US5001042A Color photographic image formation method 公开/授权日:1991-03-19