公开(公告)号：US3961354A

公开(公告)日：1976-06-01

申请号：US416799

申请日：1973-11-19

申请人： Masahiro Kuwagata ,  Masao Yamada ,  Kenichiro Nakamura ,  Yorisada Kawakami

发明人： Masahiro Kuwagata ,  Masao Yamada ,  Kenichiro Nakamura ,  Yorisada Kawakami

IPC分类号： H01L29/74 ,  H01L21/78 ,  H01L29/00 ,  H01L29/06 ,  H01L29/747 ,  H01L7/44

CPC分类号： H01L29/0638 ,  H01L21/78 ,  H01L29/00

摘要： An improved method of manufacturing a mesa type thyristor includes the formation, onto at least one face of a semiconductor substrate of a prescribed conductivity type of a ring or rings, of a deeply diffused region of the same conductivity type or that of the substrate but of a higher impurity concentration. As a result, the ring or rings of the deeply diffused region, surrounding the essential part of the thyristor, are, subsequent to the process of mesa-etching, exposed along the peripheral surface linking both faces of the substrate. The high-doped ring serves to effectively prevent an undesirable inducing of an inversion layer (i.e. channel region) across both surfaces of the substrate.

摘要翻译： 制造台面型晶闸管的改进方法包括在相同导电类型或基板的深度扩散区域的规定导电类型的环或环的半导体衬底的至少一个面上形成，但是 杂质浓度较高。 结果，围绕晶闸管的主要部分的深扩散区域的环或环是在台面蚀刻过程之后沿着连接基板的两个面的外周表面露出的。 高掺杂环用于有效地防止在衬底的两个表面上不希望地引起反转层（即，沟道区）。

公开(公告)号：US4480261A

公开(公告)日：1984-10-30

申请号：US390113

申请日：1982-06-18

申请人： Hirotsugu Hattori ,  Masahiro Kuwagata

发明人： Hirotsugu Hattori ,  Masahiro Kuwagata

IPC分类号： H01L21/52 ,  H01L21/58 ,  H01L21/60 ,  H01L23/492 ,  H01L23/54 ,  H01L23/18

CPC分类号： H01L24/83 ,  H01L23/4924 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/04026 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/8319 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/1576

摘要： In bonding a semiconductor substrate onto a mounting means, a multiple layer metal electrode is formed on the surface, the multiple layer comprising at least a chromium-nickel alloy layer, nickel layer and a noble metal layer of a noble metal selected from a group consisting of gold, silver or platinum, which is bonded to a solder layer of Pb-Sn-alloy or Ag-Sb-Sn-alloy of the mounting means.

摘要翻译： 在将半导体衬底粘合到安装装置上时，在表面上形成多层金属电极，所述多层至少包括铬 - 镍合金层，镍层和贵金属的贵金属层，所述贵金属选自以下组： 的金，银或铂，其结合到安装装置的Pb-Sn合金或Ag-Sb-Sn合金的焊料层。