发明授权
- 专利标题： Minority carrier isolation barriers for semiconductor devices
- 专利标题（中）： 半导体器件的少数载体隔离屏障
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申请号： US474033申请日： 1974-05-28
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公开(公告)号： US3988762A公开(公告)日： 1976-10-26
- 发明人: Harvey E. Cline , Thomas R. Anthony , Richard A. Kokosa , E. Duane Wolley
- 申请人： Harvey E. Cline , Thomas R. Anthony , Richard A. Kokosa , E. Duane Wolley
- 申请人地址： NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： NY Schenectady
- 主分类号： H01L21/761
- IPC分类号： H01L21/761 ; H01L21/00 ; H01L21/18 ; H01L21/76 ; H01L27/08 ; H01L29/00 ; H01L27/04 ; H01L29/04 ; H01L29/167 ; H01L29/207
摘要：
A minority carrier isolation barrier in a body of semiconductor material is formed by the migration of a suitable metal-rich liquid zone of an impurity material through the semiconductor body. A thermal gradient zone melting process is practiced to produce a region of recrystallized semiconductor material of the body having solid solubility of an impurity therein to impart a level of minority carrier lifetime thereto which is different from that level of minority carrier lifetime of the body.
公开/授权文献
- US5208439A Laser beam relay unit 公开/授权日：1993-05-04
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