公开(公告)号：US5478513A

公开(公告)日：1995-12-26

申请号：US415119

申请日：1995-03-29

Applicant: Philip G. Kosky ,  Thomas R. Anthony

Inventor： Philip G. Kosky ,  Thomas R. Anthony

IPC: C01B6/00 ,  C23C16/01 ,  C23C16/26 ,  C23C16/27 ,  C30B25/02 ,  C30B25/18 ,  C30B29/04 ,  H01L21/205 ,  B29C35/00

CPC classification number: C23C16/01 ,  C23C16/271 ,  Y10T428/30

Abstract: A method for producing CVD diamond film on a substrate comprised of a hydride-forming metal. The substrate provides for easy release of the CVD diamond coating formed thereon upon exposure to a hydrogen pressure. Self-supporting CVD diamond films of large dimension are easily obtained without dissolving the substrate. The substrate can be used in conventional CVD reactors.

Abstract translation: 在由氢化物形成金属构成的基板上制造CVD金刚石膜的方法。 衬底提供了在暴露于氢气压力时在其上形成的CVD金刚石涂层的容易释放。 容易获得大尺寸的自支撑CVD金刚石薄膜，而不会溶解基材。 基板可用于常规CVD反应器。

公开(公告)号：US5464665A

公开(公告)日：1995-11-07

申请号：US74197

申请日：1993-06-09

Applicant: Thomas R. Anthony ,  James F. Fleischer

Inventor： Thomas R. Anthony ,  James F. Fleischer

IPC: C23C16/26 ,  C23C16/27 ,  C23C16/513 ,  B05D3/06 ,  B01J3/06

CPC classification number: C23C16/27 ,  C23C16/277 ,  C23C16/513

Abstract: Broadly, the present invention is directed to improving a chemical vapor phase deposition (CVD) method for synthesis of diamond wherein a hydrocarbon/hydrogen gaseous mixture is subjected to a combustion flame in the presence of oxygen to at least partially decompose the gaseous mixture to form CVD diamond. The improvement in process comprises subjecting said combustion flame to one or more of dielectric heating, d.c. discharge, or a.c. discharge. Dielectric heating can be accomplished by subjecting the combustion flame to microwave (MW) frequency discharge or radiofrequency (RF) discharge. By superimposing dielectric heating or d.c./a.c. discharge plasma generation on combustion flame process, the carbon utilization rate of the combustion flame process should improve substantially. As noted above, given the low carbon utilization rate for combustion flame techniques already, small percentage improvements in the carbon utilization rates translate into substantial cost savings in generation of CVD diamond by such combustion flame technique.

Abstract translation: 广义上，本发明涉及改进用于合成金刚石的化学气相沉积（CVD）方法，其中烃/氢气体混合物在氧气存在下经受燃烧火焰以至少部分地分解气态混合物以形成 CVD金刚石。 所述方法的改进包括使所述燃烧火焰经受介电加热，直流等级中的一种或多种。 放电或直流 卸货。 介电加热可以通过对燃烧火焰进行微波（MW）频率放电或射频（RF）放电来实现。 通过叠加电介质加热或直流/ 在燃烧火焰过程中排放等离子体产生，燃烧火焰过程的碳利用率应显着提高。 如上所述，鉴于燃烧火焰技术的低碳利用率已经存在，通过这种燃烧火焰技术生成CVD金刚石，碳利用率的小幅度改善转化成大量成本。

公开(公告)号：US5451430A

公开(公告)日：1995-09-19

申请号：US238543

申请日：1994-05-05

Applicant: Thomas R. Anthony ,  James F. Fleischer ,  Bradley E. Williams

Inventor： Thomas R. Anthony ,  James F. Fleischer ,  Bradley E. Williams

IPC: C23C16/27 ,  C23C16/56 ,  B05D3/02

CPC classification number: C23C16/27 ,  C23C16/56 ,  Y10T428/30

Abstract: A stress relieved CVD diamond is produced by annealing said CVD diamond at a temperature above about 1100 to about 2200 degrees Centigrade in a non-oxidizing atmosphere at a low pressure or vacuum and for a suitable short period of time which decreases with increasing annealing temperature so as to prevent graphitization of said diamond.

Abstract translation: 通过在低压或真空下的非氧化性气氛中在高于约1100至约2200摄氏度的温度下退火所述CVD金刚石并且在随着退火温度升高而降低的合适的较短时间内，产生应力消除的CVD金刚石。 以防止所述金刚石的石墨化。

公开(公告)号：US5424096A

公开(公告)日：1995-06-13

申请号：US261358

申请日：1994-06-13

Applicant: Thomas R. Anthony ,  James F. Fleischer ,  Robert H. Ettinger

Inventor： Thomas R. Anthony ,  James F. Fleischer ,  Robert H. Ettinger

IPC: C30B25/00 ,  C23C16/26 ,  C23C16/27 ,  C23C16/458 ,  C30B25/02 ,  C30B29/04

CPC classification number: C23C16/279 ,  C23C16/271 ,  C23C16/458 ,  C30B25/02 ,  C30B29/04 ,  Y10T428/30

Abstract: Diamond is produced by chemical vapor deposition on a substrate by hot filament activation of a hydrogen-hydrocarbon gas mixture. An edge of the substrate faces the filament at a distance; therefrom up to about 1 mm. and preferably about 0.3-0.7 mm., and the substrate is moved relative to the filament to maintain this spacing as diamond forms thereon. Diamond formation proceeds at an improved rate, and in single crystal configuration under certain conditions.

Abstract translation: 通过氢 - 碳氢化合物气体混合物的热丝活化，通过化学气相沉积在基底上产生金刚石。 衬底的边缘与长丝相隔一定距离; 从而高达约1mm。 并且优选约0.3-0.7mm，并且基底相对于细丝移动以将该间隔保持为其上的金刚石形状。 金刚石的形成以提高的速度进行，并且在某些条件下以单晶构型进行。

公开(公告)号：US5419276A

公开(公告)日：1995-05-30

申请号：US163608

申请日：1993-12-06

Applicant: Thomas R. Anthony ,  William F. Banholzer ,  James F. Fleischer ,  James W. Bray ,  Jerome J. Tiemann ,  Laurence Bigio

Inventor： Thomas R. Anthony ,  William F. Banholzer ,  James F. Fleischer ,  James W. Bray ,  Jerome J. Tiemann ,  Laurence Bigio

IPC: B01J3/06 ,  C01B31/06 ,  C09K3/14 ,  C30B25/02 ,  C30B29/04 ,  G02B5/20

CPC classification number: C01B31/06 ,  B01J3/062 ,  C30B25/02 ,  C30B29/04 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0625 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/0685

Abstract: Single-crystal diamond consisting of isotopically pure carbon-12 or carbon-13 has been found to have a thermal conductivity higher than that of any substance previously known, typically at least 40% higher than that of naturally occurring IIA diamond. It may be prepared by a method comprising comminution of diamond of high isotopic purity, such as that obtained by low pressure chemical vapor deposition employing an isotopically pure hydrocarbon in combination with hydrogen, followed by conversion of the comminuted diamond to single-crystal diamond under high pressure conditions.

Abstract translation: 已经发现由同位素纯碳-12或碳-13组成的单晶金刚石的导热率高于以前已知的任何物质的导热率，通常比天然存在的IIA金刚石高出至少40％。 它可以通过包括粉碎高同位素纯度的金刚石的方法制备，例如通过使用同位素纯的烃与氢组合的低压化学气相沉积获得的方法，然后将粉碎的金刚石转化为高温下的单晶金刚石 压力条件。

公开(公告)号：US5368031A

公开(公告)日：1994-11-29

申请号：US125520

申请日：1993-09-24

Applicant: Harvey E. Cline ,  Thomas R. Anthony

Inventor： Harvey E. Cline ,  Thomas R. Anthony

IPC: A61B17/00 ,  A61B18/22 ,  A61B19/00 ,  A61N7/02 ,  G01R33/48 ,  G01R33/561 ,  G01R33/563 ,  A61B5/055

CPC classification number: G01R33/4804 ,  A61B18/22 ,  A61N7/02 ,  A61B2017/00154 ,  A61B2090/374 ,  G01R33/561 ,  G01R33/56341

Abstract: Surgery is performed with pulsed heat means that selectively destroys tissue in a region within a patient. The size of the region destroyed is dependent upon the frequency of the pulses of the pulsed heat means and thermal conductivity of the tissue of the patient. The pulsed heat means can be a coherent optical source that is guided by laser fiber to the tissue to be destroyed. In another embodiment the pulsed heat means is a focussed ultrasound transducer that dissipates ultrasonic energy at a focal point within the region of tissue to be destroyed. A magnetic resonance imaging system employing a temperature sensitive pulse sequence creates an image of the tissue and the region being heated to allow a surgeon to alter the position of the pulsed heat means or vary the pulse frequency.

Abstract translation: 使用脉冲加热手段进行手术，其选择性地破坏患者内的区域中的组织。 破坏的区域的大小取决于脉冲加热装置的脉冲频率和患者组织的热导率。 脉冲加热装置可以是由激光纤维引导到要破坏的组织的相干光源。 在另一个实施例中，脉冲加热装置是聚焦的超声换能器，其在要破坏的组织区域内的焦点处散发超声波能量。 使用温度敏感脉冲序列的磁共振成像系统产生组织的图像和被加热的区域，以允许外科医生改变脉冲加热装置的位置或改变脉冲频率。

公开(公告)号：US4958592A

公开(公告)日：1990-09-25

申请号：US234773

申请日：1988-08-22

Applicant: Thomas R. Anthony ,  Robert C. DeVries ,  Richard A. Engler ,  Robert H. Ettinger ,  James F. Fleischer

Inventor： Thomas R. Anthony ,  Robert C. DeVries ,  Richard A. Engler ,  Robert H. Ettinger ,  James F. Fleischer

IPC: H05B3/06 ,  C23C16/27 ,  C23C16/44 ,  C30B25/02 ,  C30B25/10 ,  C30B29/04 ,  H05B3/62

CPC classification number: C30B25/10 ,  C23C16/271 ,  C23C16/44 ,  C30B25/02 ,  C30B29/04

Abstract: A plural substrate CVD apparatus for diamond crystal production utilizes spaced apart vertical, parallel, planar substrate panels with an electrical (direct current, D.C.) resistance filament heater therebetween. A hydrogen-hydrocarbon gas mixture flows between panels to come into contact with the heater and the panels to cause diamond crystal nucleation and growth on the substrate panels. The apparatus includes means for maintaining the spaced relationship of the heater from the substrate surfaces, comprising a rod member attached to one end of the heater and tensioned by a cable passing over a pulley member and attached to a weight.

Abstract translation: 用于金刚石晶体生产的多基板CVD装置利用间隔开的垂直，平行，平面的基板面板，其间具有电（直流，直流）电阻丝加热器。 氢 - 烃气体混合物在面板之间流动以与加热器和面板接触，从而在衬底面板上引起金刚石晶体成核和生长。 该装置包括用于保持加热器与衬底表面间隔开的关系的装置，包括连接到加热器的一端并由穿过皮带轮构件并连接到重物上的电缆张紧的杆构件。

公开(公告)号：US4628174A

公开(公告)日：1986-12-09

申请号：US651014

申请日：1984-09-17

Applicant: Thomas R. Anthony

Inventor： Thomas R. Anthony

IPC: H01B13/00 ,  H05K3/40 ,  B23K28/00

CPC classification number: H01B13/0026 ,  H05K3/4076

Abstract: A conductor is provided through a narrow bore hole of a wafer. The hole has a length-to-diameter ratio in excess of six. The conductor is formed by condensation of metal vapor generated at the bottom of said hole by a spark. The spark is generated between a vaporizable metal at the bottom of the hole and a thin electrode disposed above the hole from a conventional automobile coil and battery operating through a mercury switch.

Abstract translation: 导体通过晶圆的窄孔加工。 该孔的长径比大于6。 导体是通过火花在所述孔的底部产生的金属蒸气冷凝而形成的。 在孔底部的可汽化金属与设置在孔上方的薄电极之间产生火花，其中传统的汽车线圈和通过汞开关操作的电池。

公开(公告)号：US4549912A

公开(公告)日：1985-10-29

申请号：US449347

申请日：1982-12-13

Applicant: Thomas R. Anthony

Inventor： Thomas R. Anthony

IPC: C30B13/02 ,  C30B13/06 ,  H01L21/28

CPC classification number: C30B13/06 ,  C30B13/02 ,  Y10T428/12528

Abstract: In the electromigration process, liquid metal inclusions are migrated into or through bodies of semiconductor material by an electrical potential gradient driving force. The method of this invention provides anode and cathode connections generally useful in the practice of electromigration and connections which are especially useful in circumventing the adverse effects of several types of rectifying junctions encountered in the practice of electromigration.

Abstract translation: 在电迁移过程中，液态金属夹杂物通过电位梯度驱动力迁移到半导体材料体中或穿过半导体材料体。 本发明的方法提供了在实践电迁移和连接方面通常有用的阳极和阴极连接，其特别可用于避免在电迁移实践中遇到的几种类型的整流结的不利影响。

公开(公告)号：US4547836A

公开(公告)日：1985-10-15

申请号：US576085

申请日：1984-02-01

Applicant: Thomas R. Anthony

Inventor： Thomas R. Anthony

IPC: H01L35/32 ,  H05K1/18

CPC classification number: H01L35/32 ,  Y10S428/901 ,  Y10T428/12361 ,  Y10T428/12597 ,  Y10T428/24273 ,  Y10T428/24917 ,  Y10T428/24926

Abstract: A glass wafer having high aspect ratio holes passing therethrough is provided with metal conductors in the holes as feedthroughs. First, the wafer is processed to line the holes with a thin electron-conducting layer of metal. Next, a layer of the same or different metal is applied over the first metal layer providing the requisite feedthrough electrical conductivity for each hole. Preferably, the glass contains lead oxide, the first metal layer is lead and the next layer is copper.