发明授权
US4005469A P-type-epitaxial-base transistor with base-collector Schottky diode clamp
失效
具有基极集电极肖特基二极管钳位的P型外延基极晶体管
- 专利标题： P-type-epitaxial-base transistor with base-collector Schottky diode clamp
- 专利标题（中）： 具有基极集电极肖特基二极管钳位的P型外延基极晶体管
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申请号： US588918申请日： 1975-06-20
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公开(公告)号： US4005469A公开(公告)日： 1977-01-25
- 发明人: Augustine Wei-Chun Chang , Vincent Joseph Lucarini
- 申请人： Augustine Wei-Chun Chang , Vincent Joseph Lucarini
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/331 ; H01L21/74 ; H01L21/8222 ; H01L27/07 ; H01L29/10 ; H01L29/47 ; H01L29/73 ; H01L29/872 ; H01L29/48 ; H01L29/56 ; H01L29/64 ; H01L29/72
摘要：
A clamped epi-base NPN transistor with very short saturation time constant is obtained by ion implantation in the P-type base region to convert a portion thereof to N.sup.- conductivity type contiguous to the collector reach-through region. The converted region is contacted by an extended metal electrode which also contacts the base region. The metal electrode establishes ohmic contact to the base region and Schottky diode contact to the converted region and to the collector region connected thereto.
公开/授权文献
- US5640436A Method and apparatus for X-ray computed tomography 公开/授权日：1997-06-17
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