发明授权
- 专利标题： Method of forming deposition films for use in multi-layer metallization
- 专利标题（中）： 形成用于多层金属化的沉积膜的方法
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申请号： US641299申请日： 1975-12-16
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公开(公告)号： US4024041A公开(公告)日： 1977-05-17
- 发明人: Masanobu Hanazono , Osamu Asai , Katsumi Tamura
- 申请人： Masanobu Hanazono , Osamu Asai , Katsumi Tamura
- 申请人地址： JA
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JA
- 优先权： JA49-144500 19741218; JA49-144501 19741218
- 主分类号： C23C14/04
- IPC分类号： C23C14/04 ; G11B5/31 ; H01F41/34 ; H01L21/768 ; H05K3/14 ; C23C15/00
摘要：
A method of forming thin films wherein a film is formed through glow discharge such as ion plating or sputtering by using a mask whose surface in contact with the surface of the substrate on which the film is formed is provided with a thermostable elastic member, whereby the film, for use in multi-layer metallization, can be formed with high dimensional precision and intimacy.
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