摘要:
A method of forming thin films wherein a film is formed through glow discharge such as ion plating or sputtering by using a mask whose surface in contact with the surface of the substrate on which the film is formed is provided with a thermostable elastic member, whereby the film, for use in multi-layer metallization, can be formed with high dimensional precision and intimacy.
摘要:
A narrow track width magnetic head can be formed using an integrated circuit formation techniques such as evaporation plating, chemical etching, etc. But, there has been such a problem that it is difficult to provide a center tap in a conventional thin film magnetic head structure including coils of four or more turns. A magnetic head according to the present invention comprising a coil divided into two sections by the center tap, the electrostatic capacitance of each section being substantially the same. The coil may be formed into a precise pattern with ease by photoetching technique. A plurality of sets of conductive films insulated from one another are provided crossing a magnetic core, each set consisting of two conductive films of the same pattern. The alternating layers of the conductive films are connected on the backward of a magnetic gap to provide the two sections of the coil. A center tap is derived from a connection portion of the two sections of the coil and a coil terminal is provided at each of the opposite free ends of the coil. Thus, the thin film magnetic head having a multi-turn coil with a center tap is provided.
摘要:
A thin film integrated circuit consists of a first conductor of aluminum extended in any desired direction on an insulating substrate, an anodized film formed by anodization in a chromic acid solution at positions other than cross-connectional parts on the first conductor, a second conductor cross-connected on the first conductor, and an anodized film formed by anodization in a chromic acid solution on the surface of the second conductor. The thin film integrated circuit is prepared by partially forming an anodized film in a sulfuric acid or oxalic acid solution at cross-connectional parts of a first conductor of aluminum so as not to form any anodized film in a chromic acid solution at the cross-sectional parts of the first conductor of the circuit, masking the partially formed anodized film with a photoresist film, then forming an anodized film by a chromic acid solution, and then removing the photoresist film and the anodized film. After the cross-sectional parts of the first conductor are exposed thereby, a second conductor is formed. For an etching solution for anodized film, which is anodized using the sulfuric acid or oxalic acid solution, a mixed solution consisting of 60 to 40 g/l of chromic acid and 40 to 300 g/l of oxidative acid is used.
摘要:
By forming a metallic coating on a sufficiently cleaned semiconductor substrate through ion plating, a low power loss and high switching speed semiconductor device is obtained which differs from an ordinary semiconductor device with a diffused junction. In an interface between the metallic coating and the semiconductor substrate, a considerably thin metal-injected layer is formed toward the semiconductor substrate. Schottky barrier devices may be formed by the method of the invention.
摘要:
An electroluminescent device including dielectric films each of which consists of first regions made of a material with a strong self-healing type dielectric breakdown characteristic, second regions made of a material with a strong propagating type dielectric breakdown characteristic, and mixed regions consisting of a mixture of these two materials, the first and second regions being arranged alternately in the film thickness direction with the mixed regions therebetween, the mixing ratio of these two materials in the mixed regions changing in such a manner that the ratio of one material gradually decreases from a region of this material toward the adjacent region of the other material, that is, the ratio of the other material increases. Thus, the changes in the mixing ratio of these two materials of the dielectric films in the film thickness direction are continuous and periodic. These dielectric films, with a high breakdown field strength, make it possible to obtain an electroluminescent device having a large drive voltage margin and providing a luminescence of high brightness.
摘要:
A thermal head which comprises an electrically insulating substrate, a glaze layer laid thereon, a heating resistor layer laid on the glaze layer, a plurality of first layer conductors laid on the heating resistor layer and provided at predetermined distances, a protective film laid on the heating resistor layer, and a plurality of second layer conductors counterposed to the first layer conductors and laid on the first layer conductors through an interlayer insulating film, where the interlayer insulating layer is in a two layer structure of an inorganic insulating material layer having a compressive stress and an organic insulating material layer, and the organic insulating material layer is positioned on the second layer conductor side. The thermal head as structured above is free from a problem of crack formation on the interlayer insulating layer, causing a short circuit and free from a problem of discontinuation of the second layer conductors.
摘要:
An electrophotographic photoreceptor comprising a photoconductive layer comprising a photoconductor, a support for the photoconductive layer and a surface layer formed on the photoconductive layer and comprising a curable resin film and an inorganic insulator pieces having a size larger than the film thickness of the curable resin film. In order to prevent the image blurring of an a-Si:H photoreceptor, on the outermost surface of the photoreceptor was formed a surface layer having a structure in which inorganic insulator pieces have protruded from the curable resin film. Since the curable resin is of high resistance and shows no quality change by corona irradiation, and besides the protruding inorganic insulator pieces prevent the abrasion of the resin, the surface layer having a long life and excellent humidity resistance, durability for corona irradiation and abrasion resistance can be realized. Further, by covering the surface layer with a fluorine-containing lubricant, the surface layer having a low friction coefficient and excellent cleaning characteristics is obtained, and besides the resin constituting the surface layer absorbs little moisture. As a result, it becomes possible to use the a-Si:H photoreceptors without a heater. Also, the surface layer of the present invention can be removed and then re-formed.
摘要:
A magnetic semiconductor element formed by joining a magnetostrictive material and a semiconductive material with each other, in which the lattice constant of the semiconductive material is variable by magnetostriction at the interface therebetween; or in which an interface between the two materials is formed by epitaxial growth and the orientation of the magnetostriction is identical to the orientation in which the lattice constant of the semiconductive material varies. Next, a semiconductor laser is so constructed that the interface between the magnetostrictive material and the semiconductive material is disposed in the semiconductor laser and the wavelength and the output of the semiconductor laser are variable by magnetostriction. Further, a method of making a magnetic semiconductor element comprises a step of epitaxially growing the layer of the magnetostrictive material on the layer made of the semiconductive material. Furthermore, a magneto-optical read out head is so constructed that the interface formed by joining the magnetostrictive material and the semiconductive material with each other is disposed in the semiconductor laser constituting a head reading out information recorded in a magnetic recording medium.
摘要:
A thin film magnetic head is disclosed which includes a substrate, a first magnetic core disposed on the substrate, a second magnetic core forming a magnetic path in conjunction with the first magnetic core, a conductor coil wound in the magnetic path and a gap formed between ends of the first magnetic core and the second magnetic core. At least one of the first magnetic core and the second magnetic core includes a thin film of a cobalt alloy. The cobalt alloy includes 20-70 atomic percent of cobalt, 20-60 atomic percent of nickel, 12-30 atomic percent of iron and 5-32 atomic percent of palladium.
摘要:
A method of forming a thin film pattern on a base having a step portion. This method comprises a first step of forming a thin film of given material on the base, a second step of forming a predetermined pattern of a first photoresist film on said thin film at one of a first portion including a lower part of the step portion and a second portion including an upper part of the step portion, a third step of forming a predetermined pattern of a second photoresist film on said thin film at the other of the first and second portions and a fourth step of applying ion-milling to said thin film of given material using masks said first and second photoresist film patterns formed on said thin film at the first and second portions.