发明授权
- 专利标题: Method of growing single crystals of rare earth metal iron garnet materials
- 专利标题(中): 生长稀土金属铁石榴石材料单晶的方法
-
申请号: US794393申请日: 1977-05-06
-
公开(公告)号: US4092208A公开(公告)日: 1978-05-30
- 发明人: John Chadwick Brice , John Mackay Robertson
- 申请人: John Chadwick Brice , John Mackay Robertson
- 申请人地址: NY New York
- 专利权人: U.S. Philips Corporation
- 当前专利权人: U.S. Philips Corporation
- 当前专利权人地址: NY New York
- 优先权: UK51392/74 19741127
- 主分类号: C04B35/26
- IPC分类号: C04B35/26 ; C30B9/00 ; C30B19/02 ; H01F41/28 ; B01J17/18 ; C01F17/00
摘要:
A method of growing monocrystalline bismuth rare earth iron garnet, either as a single crystal or as an epitaxial layer, from a solution containing composing components of the garnet together with a flux. The flux consists essentially of a mixture of Bi.sub.2 O.sub.3 and RO.sub.2, wherein R is at least one of the elements Si, Ge, Ti, Sn, Zr, Ce and Te, wherein the system Bi.sub.2 O.sub.3 --RO.sub.2 includes a eutectic composition having a eutectic temperature which is below the melting temperature of pure Bi.sub.2 O.sub.3. By using these Bi.sub.2 O.sub.3 --RO.sub.2 fluxes, the monocrystalline garnets produced have lower optical absorption coefficients at, for example 5100 A and 5600 A than similar garnets grown using lead-containing fluxes. Furthermore higher growth rates and higher growth temperatures are possible when using the Bi.sub.2 O.sub.3 --RO.sub.2 fluxes rather than lead-containing fluxes.
公开/授权文献
- US5748320A Wiring pattern line width measuring apparatus 公开/授权日:1998-05-05
信息查询