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    Method of depositing a layer of magnetic bubble domain material on a monocrystalline substrate
    3.
    发明授权
    Method of depositing a layer of magnetic bubble domain material on a monocrystalline substrate 失效
    在单晶衬底上沉积一层磁性气泡区域材料的方法

    公开(公告)号：US4239805A

    公开(公告)日：1980-12-16

    申请号：US967678

    申请日：1978-12-08

    Applicant: Herman D. Jonker

    Inventor： Herman D. Jonker

    IPC: H01F41/14 ,  C30B29/28 ,  G11C19/08 ,  H01F10/24 ,  H01F41/28 ,  B32B9/04 ,  H01F10/02

    CPC classification number: G11C19/08 ,  H01F41/28 ,  Y10S428/90

    Abstract: In the LPE growth of magnetic bubble domain garnets from a melt the overall dependence of the saturation magnetization on the growth temperature can be adjusted to make the bubble domain collapse field independent of the growth temperature. In the melts, from which these garnets are grown, two types of non-magnetic ions are substituted for the iron ions, each of which ions, if substituted alone, would result in garnet materials having opposite dependence of the saturation magnetization on the growth temperature.

    Abstract translation: 在熔融气泡畴石榴石的LPE生长中，可以调节饱和磁化强度对生长温度的整体依赖性，使气泡畴塌陷场与生长温度无关。 在这些石榴石生长的熔体中，两种类型的非磁性离子代替铁离子，每种离子如果单独取代，将导致具有饱和磁化强度对生长温度具有相反依赖性的石榴石材料 。

    Method for producing bubble domains in magnetic film-substrate structures
    4.
    发明授权
    Method for producing bubble domains in magnetic film-substrate structures 失效
    在磁性薄膜基体结构中生产泡罩的方法

    公开(公告)号：US3788896A

    公开(公告)日：1974-01-29

    申请号：US3788896D

    申请日：1970-12-28

    Applicant: NORTH AMERICAN ROCKWELL

    Inventor： MEE J ,  BESSER P

    IPC: H01F10/24 ,  H01F41/28 ,  H01F10/06

    CPC classification number: H01F10/24 ,  H01F41/28

    Abstract: A METHOD FOR PRODUCING A BUBBLE DOMAIN IN AMAGNETIC SINGLE CRYSTLA GARNET FILM-SUBSTRATE STRUCTURE IS DISCLOSED. THE METHOD INVOLVES THE EPTIAXIAL DEPOSITION OF AN IRON GARNET FILM OF THE PROPER ORIENTATION AND HAVING A NEGATIVE MAGNETOSTRICTION CONSTANT ON A GARNET SUBSTRATE IN WHICH THE ROOM TEMPERATURE LATTICE CONTHE FILM IS LARGER THAN THE ROOM TEMPERATURE LATTICE CONSTANT OF THE SUBSTRATE BY AN AMOUNT GREATER THAN ABOUT 0.035 ANGATROM.

    D R A W I N G

    Oxide garnet single crystal
    6.
    发明授权
    Oxide garnet single crystal 失效
    氧化石榴石单晶

    公开(公告)号：US5616176A

    公开(公告)日：1997-04-01

    申请号：US495934

    申请日：1995-06-28

    Applicant: Satoru Fukuda ,  Masayuki Tanno ,  Toshihiko Ryuo

    Inventor： Satoru Fukuda ,  Masayuki Tanno ,  Toshihiko Ryuo

    IPC: C30B29/28 ,  C30B19/02 ,  G02F1/09 ,  H01F10/24 ,  H01F41/28

    CPC classification number: H01F41/28 ,  C30B19/02 ,  C30B29/28 ,  H01F10/245

    Abstract: A novel rare earth-based oxide garnet single crystal suitable as a material of the elements in a magneto-optical device to exhibit a greatly decreased light absorption loss is proposed, which is prepared by the liquid epitaxial growth method on a oxide garnet single crystal wafer and having a chemical composition represented by the general formulaGd.sub.a Ho.sub.b Eu.sub.d Bi.sub.3-a-b-d Fe.sub.5-c M.sub.c O.sub.12,in which M is an element or a combination of elements selected from the group consisting of aluminum, scandium, gallium and indium, the subscript a is a positive number in the range from 1.1 to 2.1, the subscript b is a positive number in the range from 0.1 to 0.9, the subscript c is 0 or a positive number not exceeding 0.5 and the subscript d is zero or a positive number not exceeding 0.6 or, in particular, in the range from 0.03 to 0.6 with the proviso that 3-a-b-d is in the range from 0.7 to 1.2.

    Abstract translation: 提出了一种新颖的稀土类氧化石榴石单晶，其适用于磁光器件中元素的材料，以显示大大降低的光吸收损耗，其通过在氧化石榴石单晶晶片上的液体外延生长法制备 并且具有由通式GdaHobEudBi3-ab-dFe5-cMcO12表示的化学组成，其中M是选自铝，钪，镓和铟的元素或元素的组合，下标a是正数 在1.1至2.1的范围内，下标b为0.1至0.9的正数，下标c为0或不超过0.5的正数，下标d为0或不超过0.6的正数， 特别是在0.03至0.6的范围内，条件是3-abd在0.7至1.2的范围内。

    Method for preparing an oriented and textured magnetic material
    7.
    发明授权
    Method for preparing an oriented and textured magnetic material 失效
    制备面向和纹理磁性材料的方法

    公开(公告)号：US5168096A

    公开(公告)日：1992-12-01

    申请号：US673654

    申请日：1991-03-21

    Applicant: Robert Tournier

    Inventor： Robert Tournier

    IPC: C01G3/00 ,  B22D27/02 ,  C01B35/04 ,  C01G1/00 ,  C22C38/00 ,  H01F1/055 ,  H01F1/057 ,  H01F41/02 ,  H01F41/28

    CPC classification number: H01F1/057 ,  B22D27/02 ,  H01F1/055 ,  Y10S505/729

    Abstract: A method for preparing an oriented and textured magnetic compound, comprising the steps of preparing a composition at a temperature such that it comprises crystallites of the compound in the presence of a liquid; subjecting the composition to a magnetic force producing crystallite sedimentation; cooling down the composition in the presence of a magnetic force while applying a suitable temperature gradient for improving the development of a desired texture in the sedimentation area.

    Abstract translation: 一种制备取向和织构化的磁性化合物的方法，包括以下步骤：在液体存在下包含化合物的微晶的温度下制备组合物; 使组合物产生产生微晶沉降的磁力; 在磁力的存在下冷却组合物，同时施加合适的温度梯度以改善沉淀区域中所需纹理的发展。

    Garnet film for magnetic bubble element
    9.
    发明授权
    Garnet film for magnetic bubble element 失效
    石榴石膜用于磁性气泡元件

    公开(公告)号：US4397912A

    公开(公告)日：1983-08-09

    申请号：US278700

    申请日：1981-06-29

    Applicant: Norio Ohta ,  Keikichi Ando ,  Yuzuru Hosoe ,  Yutaka Sugita

    Inventor： Norio Ohta ,  Keikichi Ando ,  Yuzuru Hosoe ,  Yutaka Sugita

    IPC: G11C11/14 ,  C01G49/00 ,  H01F10/24 ,  H01F41/28 ,  G11B5/64

    CPC classification number: H01F10/24 ,  H01F41/28 ,  Y10S428/90 ,  Y10S428/91 ,  Y10T428/265

    Abstract: Herein disclosed is a magnetic garnet film for a magnetic bubble element, in which the temperature changing rate of a bubble collapse field is reduced by Gd and Ga and in which the operating characteristics of the bubbles are improved by La and Lu. The temperature coefficient of the bubble collapse field is -0.24 to 0%/.degree. C., and the operating characteristics are remarkably excellent, therefore, this garnet film is suitable for the small bubbles with a diameter smaller than or equal to 1 .mu.m.

    Abstract translation: 这里公开了一种用于磁性气泡元件的磁性石榴石膜，其中气泡塌陷场的温度变化率通过Gd和Ga降低，并且其中通过La和Lu改善气泡的操作特性。 气泡塌陷场的温度系数为-0.24〜0％/℃，操作特性明显优异，因此该石榴石薄膜适用于直径小于等于1μm的小气泡。

    Magnetic devices and method of manufacture
    10.
    发明授权
    Magnetic devices and method of manufacture 失效
    磁性器件及其制造方法

    公开(公告)号：US4360893A

    公开(公告)日：1982-11-23

    申请号：US163338

    申请日：1980-06-26

    Applicant: Andrew H. Bobeck ,  James C. North

    Inventor： Andrew H. Bobeck ,  James C. North

    IPC: H01F41/14 ,  H01F41/28 ,  G11C19/08

    CPC classification number: H01F41/28 ,  H01F41/14

    Abstract: Magnetic devices exemplified by bubble devices depend upon functional magnetic layers initially produced by epitaxy and reduced to effectively thinned surface layers by ion implantation. Implantation is at well-defined energy spectral levels which minimize effect on surface layers and which predominantly affect a "buried layer". As a result, such affected layer acts as a boundary layer of a functional layer which is spaced away from an interface between a substrate and a deposited layer.Commercial significance is primarily concerned with high bit density devices in which effectively thinned regions are less than 3 micrometers in thickness.

    Abstract translation: 由气泡装置示例的磁性装置取决于最初通过外延生产的功能性磁性层，并通过离子注入减少到有效变薄的表面层。 植入是明确限定的能量光谱水平，其最小化对表面层的影响，并且主要影响“掩埋层”。 结果，这种受影响的层用作与衬底和沉积层之间的界面间隔开的功能层的边界层。 商业意义主要涉及其中有效减薄区域的厚度小于3微米的高位密度器件。

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