发明授权
- 专利标题： Manufacturing a low voltage n-channel MOSFET device
- 专利标题（中）： 制造低电压n沟道MOSFET器件
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申请号： US783914申请日： 1977-04-01
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公开(公告)号： US4104784A公开(公告)日： 1978-08-08
- 发明人: Thomas Klein
- 申请人： Thomas Klein
- 申请人地址： CA Santa Clara
- 专利权人： National Semiconductor Corporation
- 当前专利权人： National Semiconductor Corporation
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L21/033
- IPC分类号： H01L21/033 ; H01L21/265 ; H01L21/8236 ; B01J17/00
摘要：
A novel MOSFET circuit and method of manufacture utilizing a double ion implant process for manufacturing a low voltage high performance n-channel device that includes an enhancement transistor inverter combined with a depletion transistor load. The process starts with high resistivity material and uses a first ion implant process to dope the field region and to give the required threshold voltage for an enhancement device. A second ion implant is used to dope the channel region for the depletion device.
公开/授权文献
- US5146655A Safety clamp appliance 公开/授权日：1992-09-15
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