发明授权
US4126794A Semiconductor charge coupled device with split electrode configuration
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具有分离电极配置的半导体电荷耦合器件
- 专利标题: Semiconductor charge coupled device with split electrode configuration
- 专利标题(中): 具有分离电极配置的半导体电荷耦合器件
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申请号: US818411申请日: 1977-07-25
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公开(公告)号: US4126794A公开(公告)日: 1978-11-21
- 发明人: Michael F. Tompsett
- 申请人: Michael F. Tompsett
- 申请人地址: NJ Murray Hill
- 专利权人: Bell Telephone Laboratories, Incorporated
- 当前专利权人: Bell Telephone Laboratories, Incorporated
- 当前专利权人地址: NJ Murray Hill
- 主分类号: G11C27/00
- IPC分类号: G11C27/00 ; H01L21/339 ; H01L29/10 ; H01L29/40 ; H01L29/417 ; H01L29/76 ; H01L29/762 ; H01L29/768 ; H03H15/02 ; G11C19/28 ; H01L29/04 ; H01L29/78 ; H03H7/28
摘要:
A semiconductor charge coupled device (CCD) with split electrode charge sensors contains a localized connecting impurity doped region, of opposite conductivity type from that of the semiconductor transfer sites, underlying the gap between each pair of split electrodes; and each such connecting region is contiguous with both transfer sites underlying each pair of split electrodes, thereby serving to equilibrate the potentials of both such transfer sites. The entire downstream edge of each of these connecting regions is bounded by a separate localized channel stopping auxiliary barrier region of higher threshold than that of the charge transfer channel, in order to suppress dynamic signal charge transfer inefficiency caused by spurious contributions of charge from the connecting regions to the propagating signal charge packets.
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