公开(公告)号：US09337198B2

公开(公告)日：2016-05-10

申请号：US13735761

申请日：2013-01-07

申请人： SK hynix Inc.

发明人： Oh Chul Kwon ,  Ki Hong Lee ,  Seung Ho Pyi

IPC分类号： H01L29/76 ,  H01L29/762 ,  H01L21/336 ,  H01L27/105 ,  H01L27/115 ,  G11C5/02 ,  H01L27/06 ,  G11C5/06

CPC分类号： H01L27/1052 ,  G11C5/025 ,  G11C5/063 ,  H01L27/0688 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11531 ,  H01L27/11556 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11582

摘要： A semiconductor memory device includes a first substrate on which a cell region is defined. In the cell region, memory cells are stacked. A second substrate is located above the first substrate, and a peripheral region is defined on the second substrate. One or more conductive lines are located in the peripheral region. The one or more lines extend through the second substrate and couple to the cell region.

摘要翻译： 半导体存储器件包括其上限定了单元区域的第一衬底。 在单元区域中，堆叠存储单元。 第二基板位于第一基板上方，并且在第二基板上限定周边区域。 一个或多个导线位于周边区域中。 一条或多条线延伸穿过第二基底并耦合到细胞区域。

公开(公告)号：US09136394B2

公开(公告)日：2015-09-15

申请号：US13720123

申请日：2012-12-19

申请人： SK hynix Inc.

发明人： Min-Soo Kim ,  Young-Jin Lee ,  Sung-Jin Whang

IPC分类号： H01L29/762 ,  H01L29/792 ,  H01L29/66 ,  H01L27/115

CPC分类号： H01L29/792 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/7926

摘要： This technology relates to a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a pipe connection gate electrode over a substrate, one or more pipe channel layers formed within the pipe connection gate electrode, pairs of main channel layers each connected with the pipe channel layer and extended in a direction substantially perpendicular to the substrate, a plurality of interlayer insulating layers and a plurality of cell gate electrodes alternately stacked along the main channel layers, and metal silicide layers configured to be in contact with the pipe connection gate electrode. The electric resistance of the pipe connection gate electrode may be greatly reduced without deteriorating the characteristics of the memory layers by forming the metal silicide layers coming in contact with the pipe connection gate electrode.

摘要翻译： 该技术涉及一种非易失性存储器件及其制造方法。 非易失性存储器件可以包括在衬底上的管连接栅极电极，形成在管连接栅极电极内的一个或多个管道沟道层，每个与管道沟道层连接并沿基本上垂直于管道沟道层的方向延伸的主通道层对 衬底，多个层间绝缘层和沿着主沟道层交替层叠的多个单元栅电极以及被配置为与管连接栅电极接触的金属硅化物层。 通过形成与管连接栅电极接触的金属硅化物层，可以大大降低管连接栅电极的电阻，而不会使存储层的特性恶化。

公开(公告)号：US07569876B2

公开(公告)日：2009-08-04

申请号：US11697620

申请日：2007-04-06

申请人： Leonard Forbes

发明人： Leonard Forbes

IPC分类号： H01L29/762

CPC分类号： H01L29/7827 ,  H01L27/10876 ,  H01M8/0289 ,  H01M8/1213 ,  H01M8/1226 ,  H01M8/1253 ,  Y02E60/525 ,  Y02P70/56

摘要： The invention includes a method of forming a semiconductor construction. Dopant is implanted into the upper surface of a monocrystalline silicon substrate. The substrate is etched to form a plurality of trenches and cross-trenches which define a plurality of pillars. After the etching, dopant is implanted within the trenches to form a source/drain region that extends less than an entirety of the trench width. The invention includes a semiconductor construction having a bit line disposed within a semiconductor substrate below a first elevation. A wordline extends elevationally upward from the first elevation and substantially orthogonal relative to the bit line. A vertical transistor structure is associated with the wordline. The transistor structure has a channel region laterally surrounded by a gate layer and is horizontally offset relative to the bit line.

摘要翻译： 本发明包括形成半导体结构的方法。 掺杂剂注入单晶硅衬底的上表面。 蚀刻衬底以形成限定多个柱的多个沟槽和交叉沟槽。 在蚀刻之后，将掺杂剂注入到沟槽内以形成延伸小于整个沟槽宽度的源极/漏极区域。 本发明包括半导体结构，其具有位于第一高度下方的位于半导体衬底内的位线。 字线从第一高度向上向上延伸，并且相对于位线基本正交。 垂直晶体管结构与字线相关联。 晶体管结构具有由栅极层横向包围并且相对于位线水平偏移的沟道区。

公开(公告)号：US07557390B2

公开(公告)日：2009-07-07

申请号：US10688073

申请日：2003-10-17

申请人： Yoshihiro Okada ,  Yuzo Otsuru

发明人： Yoshihiro Okada ,  Yuzo Otsuru

IPC分类号： H01L29/762

CPC分类号： H01L27/14812 ,  Y10S257/912

摘要： A solid image capturing element comprising a plurality of vertical shift registers arranged to each correspond to a column of a plurality of light receiving pixels in a matrix arrangement, a horizontal shift register provided on an output side of the plurality of vertical shift registers, and an output section provided on an output side of the horizontal shift register. In this solid image capturing element, a reverse conductive semiconductor region is formed over one major surface of one conductive semiconductor substrate, the plurality of light receiving pixels, the plurality of vertical shift registers, the horizontal shift register, and the output section are formed in the semiconductor region, and a portion of the semiconductor region where the output section is formed has a higher dopant concentration than the portion of the semiconductor region where the horizontal shift register is formed.

摘要翻译： 一种固体摄像元件，包括多个垂直移位寄存器，每个垂直移位寄存器被布置为对应于矩阵排列中的多个光接收像素的列，设置在多个垂直移位寄存器的输出侧的水平移位寄存器，以及 输出部分设置在水平移位寄存器的输出侧。 在该固体摄像元件中，在一个导电半导体衬底的一个主表面上形成反向导电半导体区域，多个光接收像素，多个垂直移位寄存器，水平移位寄存器和输出部分形成在 半导体区域和形成有输出部分的半导体区域的一部分具有比形成水平移位寄存器的半导体区域的部分更高的掺杂剂浓度。

公开(公告)号：US20080237651A1

公开(公告)日：2008-10-02

申请号：US12058939

申请日：2008-03-31

申请人： Eiji MATSUYAMA

发明人： Eiji MATSUYAMA

IPC分类号： H01L29/762

CPC分类号： H01L29/76833 ,  H01L27/14806

摘要： A charge transfer device 1 has an P-type region, an N-type well provided to the surficial portion of the P-type region, and transfer electrodes having P-type conductivity, provided over the N-type substrate while placing an insulating film in between.

摘要翻译： 电荷转移装置1具有P型区域，设置在P型区域的表面部分的N型阱以及设置在N型衬底上的具有P型导电性的转移电极，同时放置绝缘膜 之间。

公开(公告)号：US06972795B1

公开(公告)日：2005-12-06

申请号：US09554882

申请日：1999-09-21

申请人： Takeharu Etoh ,  Hideki Mutoh

发明人： Takeharu Etoh ,  Hideki Mutoh

IPC分类号： H01L21/339 ,  H01L27/146 ,  H01L27/148 ,  H01L29/762 ,  H01L31/02 ,  H04N5/335 ,  H04N5/341 ,  H04N5/359 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/3745 ,  H04N3/14

CPC分类号： H01L27/14812 ,  H01L27/14806 ,  H01L27/14831 ,  H01L31/02005 ,  H04N5/372

摘要： A high-speed image sensor has a plurality of signal converting means (30) for generating electric signals corresponding to an incident light intensity and a plurality of electric signal recording means (33) for recording electric signals output from corresponding signal converting means (30). The electric signal recording means (33) is linearly shaped and has a read-out line (58a) for each of longitudinal sections thereof. The read-out line (58) is used for directly reading out the electric signals out of a light receptive area.

摘要翻译： 高速图像传感器具有用于产生对应于入射光强度的电信号的多个信号转换装置（30）和用于记录从对应的信号转换装置（30）输出的电信号的多个电信号记录装置（33） 。 电信号记录装置（33）是线形的，并且具有用于其每个纵向部分的读出线（58a）。 读出线（58）用于从光接收区域直接读出电信号。

公开(公告)号：US06940140B1

公开(公告)日：2005-09-06

申请号：US09691420

申请日：2000-10-17

申请人： Kenji Ikeda ,  Kazuhiko Takeno ,  Yasuhiro Asano

发明人： Kenji Ikeda ,  Kazuhiko Takeno ,  Yasuhiro Asano

IPC分类号： G02B5/20 ,  H01L21/76 ,  H01L23/02 ,  H01L23/29 ,  H01L23/31 ,  H01L27/14 ,  H01L29/762 ,  H01L31/02 ,  H04N5/335

CPC分类号： H01L27/14618 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2924/16195 ,  H01L2924/00014

摘要： A package structure of a solid-state image sensor having a solid-state image sensor chip and a color filter stuck on a light receiving surface of the chip. The package structure includes a vessel for packaging the solid-state image sensor chip. An optically transparent protection plate is attached to the vessel to cover the light receiving surface of the chip. A resin layer is arranged between the chip and the protection plate to absorb light having a predetermined wavelength.

摘要翻译： 固态图像传感器的封装结构，其具有粘附在芯片的光接收表面上的固态图像传感器芯片和滤色器。 封装结构包括用于封装固态图像传感器芯片的容器。 光学透明的保护板附接到容器以覆盖芯片的光接收表面。 在芯片和保护板之间布置树脂层以吸收具有预定波长的光。

公开(公告)号：US20050121519A1

公开(公告)日：2005-06-09

申请号：US10991392

申请日：2004-11-19

申请人： Mahito Shinohara

发明人： Mahito Shinohara

IPC分类号： G06K7/10 ,  G06K7/14 ,  H01L21/339 ,  H01L27/146 ,  H01L29/762 ,  H04N5/335 ,  H04N5/355 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/376

CPC分类号： H01L27/14643 ,  H04N5/3559 ,  H04N5/363

摘要： Provided is an amplification type solid state image pickup device capable of increasing a saturation charge amount even when an increase in circuit scale is suppressed. In a pixel of the amplification type solid state image pickup device, a power source voltage is supplied to a signal output line to change a potential of the signal output line at transfer operation that a signal charge accumulated in a photo diode is transferred to a gate of an amplification transistor. Then, a potential of an FD portion which is capacitively coupled to the signal output line and used for supplying the signal charge to the gate of the amplification transistor increases, so that the saturation charge amount can be set to a large value.

摘要翻译： 提供了即使当抑制电路规模的增加时也能够增加饱和电荷量的放大型固态摄像装置。 在放大型固体摄像装置的像素中，电源电压被提供给信号输出线，以便在转移操作时改变信号输出线的电位，使得积聚在光电二极管中的信号电荷被传送到门 的放大晶体管。 然后，电容耦合到信号输出线并用于向放大晶体管的栅极提供信号电荷的FD部分的电位增加，使得饱和电荷量可以被设置为较大的值。

公开(公告)号：US20050036052A1

公开(公告)日：2005-02-17

申请号：US10895595

申请日：2004-07-21

申请人： Katsunori Kokubun ,  Mitsuru Sato

发明人： Katsunori Kokubun ,  Mitsuru Sato

IPC分类号： H01L21/28 ,  H01L21/339 ,  H01L27/14 ,  H01L27/146 ,  H01L27/148 ,  H01L29/762 ,  H01L31/10 ,  H04N5/335

CPC分类号： H01L29/66946 ,  H01L21/28247 ,  H01L27/14689 ,  H01L27/14806

摘要： A solid-state image pickup device is constructed in which a charge transfer portion is provided on one side of a light-receiving sensor portion, the charge transfer portion is composed of charge transfer electrodes 2A, 2B of a plurality of layers, sidewall insulating layers 11, 8 being formed on the side surfaces of the charge transfer electrodes 2A, 2B of the respective layers of the charge transfer electrodes of a plurality of layers. A method of forming the above-described solid-state image pickup device manufacturing method comprises the process for forming the charge transfer electrodes 2A, 2B and the process for forming an insulating film on the whole surface and forming the sidewall insulating layers 11, 8 on the side surfaces of the charge transfer electrodes 2A, 2B of the respective layers by effecting etch-back process on this insulating film. It is possible to provide the solid-state image pickup device having the structure in which the charge transfer electrode can be suppressed from being reduced in size due to oxidation caused when the interlayer insulators are formed on the charge transfer electrodes and in which the number of the pixels of the solid-state image pickup device can be increased and the solid-state image pickup device can be increased in density and a manufacturing method of such solid-state image pickup device.

摘要翻译： 一种固态摄像装置，其中在光接收传感器部分的一侧设置电荷转移部分，电荷转移部分由多层的电荷转移电极2A，2B组成，侧壁绝缘层 11,8形成在多层电荷转移电极的各层的电荷转移电极2A，2B的侧表面上。 形成上述固态图像拾取器件制造方法的方法包括形成电荷转移电极2A，2B的工艺和在整个表面上形成绝缘膜的工艺，并将侧壁绝缘层11,8形成在 通过对该绝缘膜进行回蚀处理，各层的电荷转移电极2A，2B的侧表面。 可以提供具有这样的结构的固态摄像装置，其中可以抑制电荷转移电极在电荷转移电极上形成层间绝缘体时由于氧化引起的尺寸减小， 可以增加固态图像拾取装置的像素，并且可以提高固态图像拾取装置的密度和这种固态图像拾取装置的制造方法。

公开(公告)号：US20050017154A1

公开(公告)日：2005-01-27

申请号：US10893023

申请日：2004-07-15

申请人： Takehiko Ozumi

发明人： Takehiko Ozumi

IPC分类号： H01L21/339 ,  H01L27/00 ,  H01L27/148 ,  H01L29/762 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372

CPC分类号： H01L27/14812 ,  H01L27/14621

摘要： A solid-state imaging device including a plurality of light receiving sections; a pixel area vertical transfer register section for transferring, column by column, charges generated by the plurality of light receiving sections; a dummy area vertical transfer register section for transferring, column by column in the vertical direction, the charges which have been transferred by the pixel area vertical transfer register section, the dummy area vertical transfer register section providing a control such that the transfer of the charges of at least one of the plurality of columns is performed in the same manner as the charges in the other columns in one case, and in a different manner from the transfer of the charges in the other columns in another case; and a horizontal transfer register section for transferring, in a horizontal direction, the charges which have been transferred from the dummy area vertical transfer register section.

摘要翻译： 一种固态成像装置，包括多个光接收部分; 一个像素区域垂直传送寄存器部分，用于逐列地传输由多个光接收部分产生的电荷; 虚拟区域垂直传送寄存器部分，用于沿垂直方向逐列传送由像素区域垂直传送寄存器部分传送的电荷，虚拟区域垂直传送寄存器部分提供控制，使得电荷的传送 在一种情况下以与其他列中的电荷相同的方式执行多个列中的至少一个列，并且以与另一列中的其他列中的电荷的传送不同的方式执行; 以及水平传送寄存器部分，用于在水平方向上传送已经从虚拟区垂直传送寄存器部分传送的电荷。