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US4130827A Integrated circuit switching network using low substrate leakage current thyristor construction 失效
集成电路开关网采用低衬底漏电流晶闸管结构

Integrated circuit switching network using low substrate leakage current
thyristor construction
摘要:
A semiconductor junction-isolated PNPN crosspoint switch array has a plurality of crosspoint switches that are each formed of four regions of alternating conductivity type in a semiconductor substrate. Low enough leakage to allow the crosspoint switch array to be used in large telephone switching systems is achieved by proper selection of the thickness of the semiconductor regions and by appropriate gold doping thereof.
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