摘要:
A semiconductor junction-isolated PNPN crosspoint switch array has a plurality of crosspoint switches that are each formed of four regions of alternating conductivity type in a semiconductor substrate. Low enough leakage to allow the crosspoint switch array to be used in large telephone switching systems is achieved by proper selection of the thickness of the semiconductor regions and by appropriate gold doping thereof.
摘要:
Integrated circuit complementary transistors for high voltage switching applications are fabricated in separate dielectrically-isolated pockets (12), (14) of high resistivity silicon, supported in a conductive medium (11) such as polycrystalline silicon, using surface adjacent conductivity type zones constituting emitter (19), (23), base (16), (20) and collector zones (17), (21). In one embodiment using high resistivity (75-300 ohm cm) silicon, referred to as .pi. material, for the material of the pocket, one transistor is a PN.pi.P device, and the other is an NP.pi.N. In the PN.pi.P the reverse-biased base-collector pn junction is the interface between the N base zone (16) and the .pi. portion (12) of the collector zone. In the NP.pi.N transistor the base-collector junction is the interface between the lightly doped .pi. extension (14) of the base zone (20) and the N collector zone (21). A connection (32) is provided to the conductive substrate to enable application of a suitable potential thereto.
摘要翻译:用于高电压开关应用的集成电路互补晶体管在高电阻率硅的独立的介电隔离的凹穴(12),(14)中制造,支撑在诸如多晶硅的导电介质(11)中,使用表面相邻导电类型区域构成发射极 (19),(23),基座(16),(20)和收集器区域(17),(21)。 在一个实施例中,使用称为pi材料的高电阻率(75-300欧姆厘米)的硅作为口袋的材料,一个晶体管是PN pi P器件,另一个是NP pi N.在PN pi P反向偏置的基极集电极pn结是N基极区(16)和收集区的π部分(12)之间的界面。 在NP p N晶体管中,基极 - 集电极结是基极区(20)的轻掺杂的π延伸部(14)与N个集电极区(21)之间的界面。 向导电基板提供连接(32)以使其能够施加合适的电位。
摘要:
A solid-state protector circuit utilizes the combination of two zener diodes (Z1, Z2), a resistor (R1), a capacitor (C1), and a gated diode switch (GDS) to facilitate the rapid discharge of high voltage transients.
摘要:
A high voltage solid-state switch, which provides bidirectional blocking, consists of a first n type semiconductor body separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body, an n+ type cathode region located at the other end, and an n+ type gate region located between the anode and cathode regions. A second p type region of lower impurity concentration than the anode region surrounds the cathode region so as to separate it from the bulk portion of the semiconductor body. Separate low resistance electrical contacts are made to the anode, cathode, and gate regions and to the substrate. The switch is capable of switching from an "ON" and conducting state to an "OFF" (blocking) state by adjusting the potential of the gate region and without having to adjust the potential of the anode or cathode regions.
摘要:
A solid-state protector circuit utilizes the combination of two zener diodes (Z1, Z2), a resistor (R1), a capacitor (C1), and a gated diode switch (GDS) to facilitate the rapid discharge of high voltage transients.
摘要:
Disclosed is a monolithic transistor circuit for high voltage applications. A high impedance bleed resistor is effectively provided across the emitter-base junction of one of the transistors. This is accomplished by placing the base regions of this and another transistor at a selected distance apart so that the zero bias depletion regions of the bases overlap to produce a punch through condition resulting in a desired current density therebetween when an external bias is supplied. The devices thus produced have a high current carrying capacity with low leakage currents.
摘要:
A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body having a major surface and being separated from a support member (semiconductor substrate) by a dielectric layer with a p+ type anode region located at one end of the semiconductor body and having a portion which is common with the major surface, an n+ type cathode region located at the other end and having a portion which is common with the major surface, and an n+ type gate region having a portion which is common with the major surface and in one embodiment being located essentially between the anode and cathode regions and in another embodiment being located other than directly between the anode and cathode regions. A second p type region of higher impurity concentration than the semiconductor body surrounds the cathode region. An n+ type semiconductor layer is sandwiched between the semiconductor body and the dielectric layer. Separate low resistance electrical contacts are made to the anode, cathode, and gate regions and to the substrate. The switch is capable of switching from an "ON" and conducting state to an "OFF" (blocking) state by adjusting the potential of the gate region and without having to adjust the potential of the anode or cathode regions.
摘要:
A high voltage solid-state switch, which provides bidirectional blocking, consists of a first p- type semiconductor body on an n type semiconductor substrate. A p+ type anode region and an n+ type cathode region exist in portions of the semiconductor body. A second p type region of higher impurity concentration than the semiconductor body surrounds the cathode region. The anode region and second p type region are separated from each other by a portion of the semiconductor body. The semiconductor substrate, which acts as a gate, has an electrode connected thereto. Separate electrodes are connected to the anode and cathode regions.
摘要:
To switch a first gated diode switch (GDS1) to the "OFF" state requires a voltage applied to the gate which is more positive than that of the anode or cathode and a sourcing of current into the gate of substantially the same order of magnitude as flows between the anode and cathode of the first switch. Control circuitry, which uses a second gated diode switch (GDSC) coupled by the cathode to the gate of the first switch (GDS1), is used to control the state of the first switch (GDS1). The control circuitry comprises a first branch circuit coupled to the gate of GDSC and to a first potential source +V1 and a second branch circuit coupled to the anode of GDSC and to a second potential source V2. The first branch circuit is connected to the gate of the second switch (GDSC) and controls the state thereof. The second branch circuit helps switch the first switch to the OFF state by providing a single current pulse or a plurality of current pulses into the gate of the first switch.
摘要:
A structure for achieving closely spaced high voltage devices in integrated circuits. The devices are formed in single crystalline tubs (11) in a polycrystalline substrate (10). In order to prevent the potential of the substrate from causing breakdown of the devices, there is included between the single crystalline tubs and the polycrystalline substrate a semi-insulating layer (13) which has trapping states capable of taking on charge from the single crystalline region. The shielding provided by the semi-insulating layer permits the surface regions of the device to be made closer to the polycrystalline substrate and the tubs to be made more shallow.