发明授权
- 专利标题： Passivation of metallized semiconductor substrates
- 专利标题（中）： 金属化半导体衬底钝化
-
申请号： US817175申请日： 1977-07-20
-
公开(公告)号： US4134125A公开(公告)日： 1979-01-09
- 发明人: Arthur C. Adams , Cesar D. Capio , Hyman J. Levinstein , Shyam P. Murarka
- 申请人： Arthur C. Adams , Cesar D. Capio , Hyman J. Levinstein , Shyam P. Murarka
- 申请人地址： NJ Murray Hill
- 专利权人： Bell Telephone Laboratories, Incorporated
- 当前专利权人： Bell Telephone Laboratories, Incorporated
- 当前专利权人地址： NJ Murray Hill
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/314 ; H01L21/56 ; H01L23/29 ; H01L29/04
摘要：
Disclosed is a method and structure for protecting circuit components from the ambient and in particular for protecting the contact metal from the adverse effects of moisture. A first layer of amorphous silicon is deposited over the circuit including the metal contacts. A second layer which may be silicon nitride or silicon dioxide is then deposited over the amorphous silicon. The amorphous silicon layer reduces cracking in the second layer and prevents cracks in the second layer from propagating to the circuit components.
公开/授权文献
- US5938889A Tape feeding apparatus 公开/授权日：1999-08-17
信息查询
IPC分类:
