发明授权
- 专利标题: Logic CMOS transistor circuits
- 专利标题(中): 逻辑CMOS晶体管电路
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申请号: US748287申请日: 1976-12-07
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公开(公告)号: US4140924A公开(公告)日: 1979-02-20
- 发明人: Henri J. Oguey , Eric A. Vittoz
- 申请人: Henri J. Oguey , Eric A. Vittoz
- 申请人地址: CHX Neuchatel
- 专利权人: Centre Electronique Horloger S.A.
- 当前专利权人: Centre Electronique Horloger S.A.
- 当前专利权人地址: CHX Neuchatel
- 优先权: CHX16029/75 19751210
- 主分类号: H03K19/00
- IPC分类号: H03K19/00 ; G11C19/28 ; H03K3/356 ; H03K19/0948 ; H03K23/54 ; H03M7/00 ; H03K21/10 ; H03K3/286 ; H03K19/08 ; H03K23/24
摘要:
The invention relates to logic CMOS transistor circuits formed by at least one gate circuit, each gate circuit comprising a pair of CMOS transistor groups connected in series between the terminals of a power supply. The conductive state of both groups of transistors defines the potential of a common connection point or output node. A power dissipating means of relatively high resistance is coupled in parallel with at least a part of at least one of the said transistor groups, at least during a time interval in which both groups are in a non conductive state. This results in a quasi static behavior of the circuits according to the invention although the basic structure of the same is that of dynamic circuits.
公开/授权文献
- US5222888A Advanced proof-of-rotation switch 公开/授权日:1993-06-29