发明授权
- 专利标题: Low frequency power amplifier using MOS FET's
- 专利标题(中): 使用MOS FET的低频功率放大器{3 s
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申请号: US895978申请日: 1978-04-13
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公开(公告)号: US4151479A公开(公告)日: 1979-04-24
- 发明人: Tatsuo Baba
- 申请人: Tatsuo Baba
- 申请人地址: JPX
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX52/41450 19770413
- 主分类号: H03F1/30
- IPC分类号: H03F1/30 ; H01L23/045 ; H01L23/36 ; H01L23/64 ; H03F3/16 ; H03F3/30 ; H03F3/34 ; H03F3/345 ; H03F3/21
摘要:
A low frequency power amplifier uses MOS FET's each having a semiconductor device unit including a source electrode, a drain electrode and an insulated gate electrode filled in a can type casing with the source electrode being electrically connected to the can type casing. When the MOS FET having its source electrode connected to the can type casing is mounted on a heat sink and operated in a source follower configuration, a stray capacity between the can-shaped casing and the heat sink is connected in parallel with a load so that the amplifier oscillates. The heat sink is grounded through an impedance element and the stray capacity is isolated from the load to prevent the oscillation.
公开/授权文献
- US5942582A Treatment of organic compounds to reduce chlorine level 公开/授权日:1999-08-24