发明授权
US4168998A Process for manufacturing a vapor phase epitaxial wafer of compound
semiconductor without causing breaking of wafer by utilizing a
pre-coating of carbonaceous powder
失效
制造化合物半导体的气相外延晶片的方法，而不会通过利用碳质粉末的预涂层而导致晶片破裂
- 专利标题： Process for manufacturing a vapor phase epitaxial wafer of compound semiconductor without causing breaking of wafer by utilizing a pre-coating of carbonaceous powder
- 专利标题（中）： 制造化合物半导体的气相外延晶片的方法，而不会通过利用碳质粉末的预涂层而导致晶片破裂
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申请号： US966953申请日： 1978-12-06
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公开(公告)号： US4168998A公开(公告)日： 1979-09-25
- 发明人: Shinichi Hasegawa , Hisanori Fujita
- 申请人： Shinichi Hasegawa , Hisanori Fujita
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Monsanto Chemical Co.
- 当前专利权人： Mitsubishi Monsanto Chemical Co.
- 当前专利权人地址： JPX Tokyo
- 主分类号： C30B25/18
- IPC分类号： C30B25/18 ; H01L21/205 ; H01L21/302
摘要：
Semiconductor epitaxial wafers consisting of an epitaxial film and its substrate can be removed, in accordance with the present invention, from a substrate supporting component, without breaking the wafers into pieces after completion of vapor growth. The carbonaceous powder according to the present invention can greatly and effectively decrease the breaking of wafers, as compared with the conventional SiO.sub.2 or SiC-coated substrate supporting components.
公开/授权文献
- US5843578A Film having fine voids and manufacture thereof 公开/授权日：1998-12-01