公开(公告)号：US4168998A

公开(公告)日：1979-09-25

申请号：US966953

申请日：1978-12-06

申请人： Shinichi Hasegawa ,  Hisanori Fujita

发明人： Shinichi Hasegawa ,  Hisanori Fujita

IPC分类号： C30B25/18 ,  H01L21/205 ,  H01L21/302

CPC分类号： C30B25/18 ,  Y10S117/915 ,  Y10S148/006 ,  Y10S148/135

摘要： Semiconductor epitaxial wafers consisting of an epitaxial film and its substrate can be removed, in accordance with the present invention, from a substrate supporting component, without breaking the wafers into pieces after completion of vapor growth. The carbonaceous powder according to the present invention can greatly and effectively decrease the breaking of wafers, as compared with the conventional SiO.sub.2 or SiC-coated substrate supporting components.

摘要翻译： 由外延膜及其基板组成的半导体外延晶片可以根据本发明从基板支撑部件移除，而不会在完成蒸气生长之后将晶片破碎成片。 与传统的SiO 2或SiC涂覆的基底支撑组分相比，根据本发明的含碳粉末可以大大且有效地减少晶片的断裂。

公开(公告)号：US2744036A

公开(公告)日：1956-05-01

申请号：US25375651

申请日：1951-10-29

申请人： INT NICKEL CO

发明人： RAYMOND PEASE GEORGE ,  EPHRAIM KIHLGREN THEODORE

IPC分类号： B23K35/30 ,  B23K35/365

CPC分类号： B23K35/3033 ,  B23K35/365 ,  Y10T428/2955

公开(公告)号：US4483736A

公开(公告)日：1984-11-20

申请号：US359204

申请日：1982-03-18

申请人： Fumio Orito

发明人： Fumio Orito

IPC分类号： C30B11/00 ,  C30B13/32

CPC分类号： C30B11/006 ,  C30B11/003

摘要： When the growth of a single crystalline III.sub.b -V.sub.b group compound is carried out employing the horizontal Bridgeman method or the gradient freeze method, it is likely that polycrystals will be grown, crystal defects will form, and the distribution of impurities will not be uniform, especially if the diameter of the single crystal is large. In the present invention, the cooling rate of the melt is controlled in an inconstant manner. Namely, crystal growth is interrupted at least once and/or the cooling rate at an earlier growth period is controlled at a high value. From 40 to 65% of the total melt crystallizes at the time when 30% of the total time required for growth has elapsed. The high yield of a single crystal is attained according to the present invention.

摘要翻译： 当使用水平Bridgeman方法或梯度冷冻法进行单晶IIIb-Vb族化合物的生长时，可能生长多晶，晶体缺陷将形成，杂质分布不均匀， 特别是如果单晶的直径较大。 在本发明中，以不变的方式控制熔体的冷却速度。 即，晶体生长中断至少一次，和/或将较早生长期的冷却速度控制在高值。 总熔体的40％至65％在生长所需总时间的30％已经过去时结晶。 根据本发明获得单晶的高产率。

公开(公告)号：US4865655A

公开(公告)日：1989-09-12

申请号：US122591

申请日：1987-11-18

申请人： Hisanori Fujita ,  Masaaki Kanayama ,  Takeshi Okano

发明人： Hisanori Fujita ,  Masaaki Kanayama ,  Takeshi Okano

IPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L27/15

CPC分类号： H01L33/30 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/0262 ,  H01L27/153 ,  H01L33/0062 ,  H01L33/0066 ,  Y10S148/041 ,  Y10S148/056 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S438/936

摘要： An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.

摘要翻译： 用于产生GaAsP-LED阵列的外延晶片在具有变化的X的GaAs1-xPx层中包括沿着GaAs1-xPx层的厚度具有x的不连续变化的层区域。 该层区域有助于在外延晶片中形成的LED的发光的亮度的均匀性。

公开(公告)号：US4378259A

公开(公告)日：1983-03-29

申请号：US219722

申请日：1980-12-24

申请人： Shinichi Hasegawa ,  Hisanori Fujita

发明人： Shinichi Hasegawa ,  Hisanori Fujita

IPC分类号： H01L21/205 ,  H01L29/205 ,  H01L33/30 ,  H01L33/34 ,  H01L21/20 ,  H01L21/324

CPC分类号： H01L29/205 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L33/0062 ,  Y10S148/084 ,  Y10S438/936

摘要： A method of manufacturing a mixed crystal compound semiconductor wafer suitable for the production of LED having a high light output. Upon a monocrystalline substrate of III-V semiconductor material a base layer is epitaxially grown of the same material as the substrate. An initial gradient layer is grown on the base layer having a mixed crystal ratio varying continuously from that of the base layer to a first value at a constant temperature. A combination sublayer is grown on the initial gradient sublayer which includes at least one constant sublayer having a constant crystal mixture ratio and at least one gradient sublayer having a crystal mixture ratio varying continuously between the mixed crystal ratios of its adjacent constant layers.

摘要翻译： 一种制造适合于生产具有高光输出的LED的混晶化合物半导体晶片的方法。 在III-V族半导体材料的单晶衬底上，与衬底相同的材料外延生长基底层。 在基底层上生长初始梯度层，其具有从基底层连续变化到恒定温度的第一值的混合晶体比。 组合子层在初始梯度子层上生长，该初始梯度子层包括至少一个具有恒定晶体混合比的恒定子层和至少一个具有在其相邻恒定层的混晶比之间连续变化的晶体混合比的梯度子层。

公开(公告)号：US4921817A

公开(公告)日：1990-05-01

申请号：US353652

申请日：1989-03-08

申请人： Masahiro Noguchi

发明人： Masahiro Noguchi

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L21/208 ,  H01L33/30 ,  H01L33/40

CPC分类号： H01L33/40 ,  H01L33/0062 ,  H01L33/30 ,  Y10S148/099 ,  Y10S148/108 ,  Y10S148/135

摘要： A substrate for a high-intensity LED and the method of epitaxially growing the substrate according to the invention are based on the fact that, in using an AuZn alloy or the like as the ohmic electrode of the p-type Al.sub.x Ga.sub.1-x As layer (2), the higher the carrier concentration of this layer, the smaller the contact resistance and the lower the applied voltage (V.sub.F) necessary for passing a forward current of 10 mA. Joint use is made of gas-phase epitaxy and liquid-phase epitaxy. A layer having a carrier concentration three to five times that of an epitaxial layer formed by liquid-phase epitaxy (LPE) can be realized with excellent reproducibility by gas-phase epitaxy (MOCVD process, MBE process, etc.). By utilizing this p-type Al.sub.x Ga.sub.1-x As layer (2) as an electrode contact layer, contact resistance can be reduced and variance diminished.

摘要翻译： PCT No.PCT / JP88 / 00677 Sec。 371日期：1989年3月8日 102（e）日期1989年3月8日PCT Filed 1988年7月6日PCT Pub。 出版物WO89 / 00769 日本1989年1月26日。根据本发明的高强度LED用基板和外延生长基板的方法是基于以下事实：在使用AuZn合金等作为对位基板的欧姆电极的情况下， 类型的Al x Ga 1-x As层（2），该层的载流子浓度越高，接触电阻越小，通过10mA的正向电流所需的施加电压（VF）越低。 联合使用气相外延和液相外延。 可以通过气相外延（MOCVD工艺，MBE工艺等）以优异的再现性实现具有通过液相外延（LPE）形成的外延层的载流子浓度的三至五倍的层。 通过利用该p型Al x Ga 1-x As层（2）作为电极接触层，可以降低接触电阻，减少方差。

公开(公告)号：US4698195A

公开(公告)日：1987-10-06

申请号：US766632

申请日：1985-08-16

申请人： Tsuguo Okumura ,  Naomichi Yamagishi ,  Kazuharu Abe ,  Masayoshi Sugiyama ,  Kenji Mori

发明人： Tsuguo Okumura ,  Naomichi Yamagishi ,  Kazuharu Abe ,  Masayoshi Sugiyama ,  Kenji Mori

IPC分类号： B29C35/02 ,  B29C55/14 ,  B29K77/00 ,  B29L7/00 ,  C08J5/18

CPC分类号： C08J5/18 ,  B29C55/143 ,  B29C2037/90 ,  B29C35/02 ,  B29K2077/00 ,  C08J2377/00

摘要： Biaxially drawn polyamide films having an excellent levelness are prepared as follows. A substantially unoriented polyamide film is heated at 45.degree.-65.degree. C., and then drawn in the longitudinal direction at a deformation rate of at least 10,000%/min. and a draw ratio of 2.7-3.5 by a roll stretcher. The drawn film is immediately transferred to the lateral drawing position at 45.degree.-60.degree. C. within a time (t):t=e.sup.(3.9-0.053T.sbsp.1.sup.) where e=the base of natural logarithm and T.sub.1 =film temperature during this period of time (t), which is 45.degree.-60.degree. C. The thickness profile of the film at the starting position of lateral drawing is gradually reduced from the side and portions toward the central portion of the width so that the film thickness at the central portion is 75-90% of the film thickness at the side end portions. The film is drawn in the lateral direction at an average deformation rate of 2,000-10,000%/min. and a draw ratio of 3-5 by a tenter type stretcher in such a manner that, until the mechanically set draw ratio between respective tenter clips exceeds 1.4 times the original distance, the film is expanded at an angle of up to 6.degree. with respect to the travelling direction at a tenter clip temperature T.sub.2 (T.sub.2

摘要翻译： 如下制备具有优良水平度的双轴拉伸聚酰胺薄膜。 将基本上未取向的聚酰胺薄膜在45-65℃下加热，然后以至少10,000％/分钟的变形速率沿纵向拉伸。 拉伸倍数为2.7-3.5。 在t = e（3.9-0.053T1）的时间内（t），拉伸膜立即在45°-60℃转移到横向拉伸位置，其中e =自然对数的基底，T1 =膜的温度 时间（t），为45°-60℃。侧面起始位置处的膜的厚度分布从宽度的中心部分的侧面和部分逐渐减小，使得膜的厚度 中央部分是侧端部分的膜厚度的75-90％。 该膜以横向方向拉伸，平均变形率为2,000-10,000％/ min。 拉幅式拉伸机的拉伸比为3-5，直到各拉幅夹之间的机械设定拉伸倍数超过原始距离的1.4倍时，膜以6度的角度膨胀，相对于 在拉幅剪辑温度T2（T2

公开(公告)号：US4609411A

公开(公告)日：1986-09-02

申请号：US694683

申请日：1985-01-25

申请人： Yasuji Kohashi ,  Toshio Ishiwatari ,  Hisanori Fujita

发明人： Yasuji Kohashi ,  Toshio Ishiwatari ,  Hisanori Fujita

IPC分类号： C30B19/00 ,  C30B19/04 ,  C30B19/10 ,  C30B29/40 ,  H01L21/208

CPC分类号： C30B29/40 ,  C30B19/04 ,  C30B19/106 ,  C30B29/42 ,  C30B29/44 ,  Y10S438/925

摘要： The reproducibility of Te doping in III-V group compounds is improved by using as the dopant a III-V group compound containing Te at a concentration of at least 1.times.10.sup.17 cm.sup.-3.

摘要翻译： 通过使用浓度为至少1×10 17 cm -3的含有Te的III-V族化合物作为掺杂剂，III-V族化合物中Te掺杂的再现性得到改善。

公开(公告)号：US4510515A

公开(公告)日：1985-04-09

申请号：US578600

申请日：1984-02-10

申请人： Masaki Kajita ,  Tomio Nakaya ,  Shinichi Hasegawa ,  Hisanori Fujita

发明人： Masaki Kajita ,  Tomio Nakaya ,  Shinichi Hasegawa ,  Hisanori Fujita

IPC分类号： H01L33/00 ,  H01L33/02 ,  H01L29/161 ,  H01L29/205

CPC分类号： H01L33/025 ,  H01L33/0025

摘要： An epitaxial wafer of a compound semiconductor comprising a single crystalline semiconductor substrate consisting of GaP and an active layer consisting of GaAs.sub.1-x P.sub.x, having a mixed crystal ratio (x) in the range of from 0.5 to 1 is used for an LED. According to the present invention, between the single crystalline semiconductor substrate and the active layer, a light-absorbing layer consisting of GaAs.sub.1-x P.sub.x having the mixed crystal ratio (x) smaller than that of the active layer, is formed to suppress the reflection of light from the surface of the substrate.

摘要翻译： 包括由GaP构成的单晶半导体衬底和由GaAs1-xPx组成的有源层的化合物半导体的外延晶片，其混晶比（x）为0.5〜1，用于LED。 根据本发明，在单晶半导体衬底和有源层之间形成由GaAs 1-xP x构成的具有比活性层小的混合晶体比（x）的光吸收层，以抑制反射 来自基板表面的光。

公开(公告)号：US5051376A

公开(公告)日：1991-09-24

申请号：US463642

申请日：1990-01-11

申请人： Yutaka Yamada ,  Toshihiko Ibuka ,  Fumio Orito ,  Yuichi Seta ,  Shin-ichiro Kawabata

发明人： Yutaka Yamada ,  Toshihiko Ibuka ,  Fumio Orito ,  Yuichi Seta ,  Shin-ichiro Kawabata

IPC分类号： H01L21/265 ,  H01L21/324

CPC分类号： H01L21/26546 ,  H01L21/3245 ,  Y10S438/934

摘要： A method for producing a semiconductor device comprises the steps of: preparing a III.sub.b -V.sub.b group compound single crystalline semiconductor substrate produced by a liquid encapsulated Czochralski process, the single crystalline semiconductor substrate having a carbon concentration of 1.times.10.sup.15 cm.sup.-3 or less, implanting conductive impurity ions into the single crystalline semiconductor substrate and then annealing, and a semiconductor device produced by this method.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：制备通过液体封装的Czochralski工艺制备的IIIb -Vb族化合物单晶半导体衬底，该单晶半导体衬底的碳浓度为1×10 15 cm -3以下，注入导电 杂质离子进入单晶半导体衬底，然后退火，以及通过该方法制造的半导体器件。