发明授权
- 专利标题： Semiconductor device with multi-layered metalizations
- 专利标题（中）： 具有多层金属化的半导体器件
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申请号： US831873申请日： 1977-09-09
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公开(公告)号： US4200969A公开(公告)日： 1980-05-06
- 发明人: Masaharu Aoyama , Shunichi Hiraki , Toshio Yonezawa
- 申请人： Masaharu Aoyama , Shunichi Hiraki , Toshio Yonezawa
- 申请人地址： JPX
- 专利权人： Tokyo Shibaura Electric Co., Ltd.
- 当前专利权人： Tokyo Shibaura Electric Co., Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX51/107888 19760910
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/306 ; H01L21/3213 ; H01L21/768 ; B01J17/00
摘要：
There are provided a semiconductor device having alternately layered insulating and conductive layers on the major surface of a semiconductor body and the process for manufacturing the semiconductor device. In the manufacturing process, the conductive layers other than the conductive layer finally formed are each formed to be a laminate including at least two metal layers of which the etching rates are different. The photo-engraving process follows this step. In the lamina, the metal layer closer to the semiconductor body has a lower etching rate than that of the metal layer formed thereover. In the semiconductor device, the conductive layer other than that disposed furthest away from the semiconductor body has its side wall diverged to widen toward the semiconductor body.
公开/授权文献
- US4726027A Data retransmitting method in communication network 公开/授权日：1988-02-16
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