发明授权
- 专利标题： Method for enhancing the crystallization rate of high purity amorphous Si.sub.3 N.sub.2 powder by intimate contact with a titanium containing material
- 专利标题（中）： 通过与含钛材料紧密接触来提高高纯度无定形Si3N2粉末的结晶速率的方法
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申请号： US943032申请日： 1978-09-18
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公开(公告)号： US4208215A公开(公告)日： 1980-06-17
- 发明人: Richard N. Kleiner , Emil J. Mehalchick
- 申请人： Richard N. Kleiner , Emil J. Mehalchick
- 申请人地址： CT Stamford
- 专利权人： GTE Service Corporation
- 当前专利权人： GTE Service Corporation
- 当前专利权人地址： CT Stamford
- 主分类号： C01B21/068
- IPC分类号： C01B21/068 ; C04B35/584 ; C04B35/593 ; C04B35/58
摘要：
High purity, fine Si.sub.3 N.sub.4 powder produced by the vapor phase reaction of SiCl.sub.4 with NH.sub.3 is amorphous. The crystallization rate of the amorphous powder is enhanced by heating the powder while in intimate contact with a titanium containing material, for example, TiN codeposited with the Si.sub.3 N.sub.4 by the simultaneous reaction of TiCl.sub.4 with NH.sub.3.
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