发明授权
- 专利标题: Polycrystalline diamond body and process
- 专利标题(中): 多晶金刚石体及工艺
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申请号: US42237申请日: 1979-05-24
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公开(公告)号: US4231195A公开(公告)日: 1980-11-04
- 发明人: Robert C. DeVries , Minyoung Lee , Lawrence E. Szala , Roy E. Tuft
- 申请人: Robert C. DeVries , Minyoung Lee , Lawrence E. Szala , Roy E. Tuft
- 申请人地址: NY Schenectady
- 专利权人: General Electric Company
- 当前专利权人: General Electric Company
- 当前专利权人地址: NY Schenectady
- 主分类号: C04B35/52
- IPC分类号: C04B35/52 ; B01J3/06 ; B24D3/08 ; C01B31/06 ; C22C26/00 ; B24D3/02
摘要:
An adherently bonded polycrystalline diamond body is produced by forming a charge composed of a mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy wherein the alloy is in contact or in association with hexagonal boron nitride, confining such charge within a reaction chamber, subjecting the confined charge to a pressure of at least 25 kilobars, heating the pressure-maintained charge to a temperature sufficient to melt the alloy and at which no significant graphitization of the diamond occurs whereby the alloy infiltrates through the interstices between the diamond crystals producing said body.
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