公开(公告)号：US4231195A

公开(公告)日：1980-11-04

申请号：US42237

申请日：1979-05-24

申请人： Robert C. DeVries ,  Minyoung Lee ,  Lawrence E. Szala ,  Roy E. Tuft

发明人： Robert C. DeVries ,  Minyoung Lee ,  Lawrence E. Szala ,  Roy E. Tuft

IPC分类号： C04B35/52 ,  B01J3/06 ,  B24D3/08 ,  C01B31/06 ,  C22C26/00 ,  B24D3/02

CPC分类号： C04B35/52 ,  B01J3/062 ,  B24D3/08 ,  C04B35/6316 ,  C04B35/645 ,  C22C26/00 ,  B01J2203/062 ,  B01J2203/0645 ,  B01J2203/0655 ,  B01J2203/066 ,  B01J2203/0685 ,  C04B2235/3826 ,  C04B2235/3834 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/3847 ,  C04B2235/3891 ,  C04B2235/40 ,  C04B2235/404 ,  C04B2235/405 ,  C04B2235/408 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/616 ,  C04B2235/721 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96

摘要： An adherently bonded polycrystalline diamond body is produced by forming a charge composed of a mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy wherein the alloy is in contact or in association with hexagonal boron nitride, confining such charge within a reaction chamber, subjecting the confined charge to a pressure of at least 25 kilobars, heating the pressure-maintained charge to a temperature sufficient to melt the alloy and at which no significant graphitization of the diamond occurs whereby the alloy infiltrates through the interstices between the diamond crystals producing said body.

摘要翻译： 通过形成由大量的共晶富硅合金接触的金刚石晶体组成的电荷，其中合金与六方氮化硼接触或与六方氮化硼结合，从而将这种电荷限制在反应中 将受限制的电荷经受至少25千伏的压力，将保压的电荷加热到足以熔化合金的温度，并且在该温度下不会发生金刚石的显着石墨化，由此合金渗入金刚石晶体之间的间隙 生产身体。

公开(公告)号：US4151686A

公开(公告)日：1979-05-01

申请号：US867938

申请日：1978-01-09

申请人： Minyoung Lee ,  Robert C. DeVries ,  Lawrence E. Szala ,  Roy E. Tuft

发明人： Minyoung Lee ,  Robert C. DeVries ,  Lawrence E. Szala ,  Roy E. Tuft

IPC分类号： B01J3/06 ,  B22F3/26 ,  B24D3/08 ,  C22C26/00 ,  B24D3/04 ,  B24D3/10

CPC分类号： C04B35/645 ,  B01J3/062 ,  B22F3/26 ,  B24D3/08 ,  C04B35/52 ,  C04B35/6316 ,  C22C26/00 ,  B01J2203/062 ,  B01J2203/0635 ,  B01J2203/0655 ,  B01J2203/0685 ,  C04B2235/3826 ,  C04B2235/427 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/616 ,  C04B2235/721 ,  C04B2235/728 ,  C04B2235/80 ,  C04B2235/96

摘要： A mass of diamond crystals contacting a mass of elemental silicon are confined within a pressure-transmitting medium. The resulting charge assembly is subjected to a pressure of at least 25 kilobars causing application of isostatic pressure to the contacting masses which dimensionally stabilizes them and increases the density of the mass of diamond crystals. The resulting pressure-maintained charge assembly is heated to a temperature sufficient to melt the silicon and at which no significant graphitization of the diamond occurs whereby the silicon is infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.

摘要翻译： 接触大量元素硅的大量金刚石晶体被限制在压力传递介质中。 所得到的电荷组件经受至少25千瓦的压力，从而对接触质量施加等静压，从而使它们尺寸稳定并增加金刚石晶体的质量密度。 将所得的保压电荷组件加热到足以熔化硅的温度，并且在该温度下不会发生金刚石的显着石墨化，由此硅渗透穿过金刚石晶体之间的间隙，在冷却时产生粘附的整体。

公开(公告)号：US4380471A

公开(公告)日：1983-04-19

申请号：US222812

申请日：1981-01-05

申请人： Minyoung Lee ,  Lawrence E. Szala ,  Roy E. Tuft

发明人： Minyoung Lee ,  Lawrence E. Szala ,  Roy E. Tuft

IPC分类号： B01J3/06 ,  B22F7/06 ,  B24D18/00 ,  B22F3/14 ,  B22F7/00 ,  C04B31/16

CPC分类号： C04B35/645 ,  B01J3/062 ,  B22F7/06 ,  B24D3/06 ,  C04B35/52 ,  C04B35/6316 ,  C04B37/006 ,  C04B37/021 ,  C04B37/026 ,  B01J2203/062 ,  B01J2203/0635 ,  B01J2203/0655 ,  B01J2203/0685 ,  C04B2235/3826 ,  C04B2235/40 ,  C04B2235/427 ,  C04B2235/428 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/604 ,  C04B2235/616 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/80 ,  C04B2237/122 ,  C04B2237/363 ,  C04B2237/401 ,  C04B2237/60 ,  C04B2237/61 ,  C04B2237/706 ,  C04B2237/708

摘要： A polycrystalline diamond body infiltrated by a silicon atom-containing metal (e.g., silicon alloy) is bonded to a substrate comprising cemented carbide with a barrier of refractory material extending between the diamonds cemented together with silicon atom-containing binder and the substrate substantially precluding migration of the cementing medium (e.g., cobalt) from the carbide substrate into contact with the silicon atom-containing bonding medium in the diamond body. The process comprises subjecting a mass of diamond powder, a quantity of silicon atom-containing metal binder material, a cemented carbide body and a barrier made of material selected from the group consisting of tantalum, vanadium, molybdenum, zirconium, tungsten and alloys thereof to the simultaneous application of elevated temperature and pressure.

摘要翻译： 由含硅原子的金属（例如，硅合金）渗透的多晶金刚石体与包含硬质合金的基底结合，所述基底具有在与含硅原子的粘合剂粘合在一起的金刚石和基材之间延伸的耐火材料的屏障，基本上排除迁移 的来自碳化物衬底的固化介质（例如钴）与金刚石体中含硅原子的粘合介质接触。 该方法包括使金刚石粉末，一定数量的含硅原子的金属粘合剂材料，硬质合金体和由选自钽，钒，钼，锆，钨及其合金的材料制成的阻挡层经受一 同时应用高温和高压。

公开(公告)号：US4143544A

公开(公告)日：1979-03-13

申请号：US809004

申请日：1977-06-22

申请人： Robert C. DeVries ,  Roy E. Tuft

发明人： Robert C. DeVries ,  Roy E. Tuft

IPC分类号： A44C27/00 ,  C23C24/02 ,  C30B33/00 ,  C30B33/04 ,  G01N27/60 ,  G01N33/38 ,  G01N19/08

CPC分类号： G01N33/381 ,  G01N27/60

摘要： A diamond or cubic boron nitride crystal containing growth discontinuities resulting from changes in the environment of the growing crystal and having at least one smooth outside surface which intersects the growth discontinuities is charged electrostatically, a fine powder is applied to the charged smooth surface and the applied powder produces a pattern on the charged surface which is a delineation of the intersected growth discontinuities.

摘要翻译： 包含由生长晶体的环境变化而产生的具有与生长不连续相交的至少一个平滑外表面的生长不连续性的金刚石或立方氮化硼晶体静电充电，将细粉末施加到带电的光滑表面上， 粉末在带电表面上产生图案，其是相交的生长不连续性的描绘。

公开(公告)号：US4316385A

公开(公告)日：1982-02-23

申请号：US160464

申请日：1980-06-18

申请人： Robert C. DeVries ,  Roy E. Tuft

发明人： Robert C. DeVries ,  Roy E. Tuft

IPC分类号： G01N27/60 ,  G01N33/38 ,  G01N19/08

CPC分类号： G01N33/381 ,  G01N27/60

摘要： A smooth surface of a diamond or cubic boron nitride crystal is bombarded with ions sufficiently to penetrate the surface and impart an ion implanted region in the crystal in a predetermined pattern, the resulting crystal is charged electrostatically, and a powder is applied to the charged smooth surface producing a pattern thereon which is a delineation of the implanted region and can be used to identify or fingerprint the crystal.

摘要翻译： 金刚石或立方氮化硼晶体的光滑表面被足够的离子轰击以穿透表面并以预定图案赋予晶体中的离子注入区域，所得晶体静电充电，并将粉末施加到带电光滑 表面产生其上的图案，其是植入区域的描绘，并且可以用于识别或指纹晶体。

公开(公告)号：US4174380A

公开(公告)日：1979-11-13

申请号：US860283

申请日：1977-12-14

申请人： Herbert M. Strong ,  Richard M. Chrenko ,  Roy E. Tuft

发明人： Herbert M. Strong ,  Richard M. Chrenko ,  Roy E. Tuft

IPC分类号： B01J3/06 ,  C09K3/14 ,  C30B33/00 ,  C01B31/06

CPC分类号： C09K3/1418 ,  B01J3/062 ,  C30B29/04 ,  C30B33/00 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/069 ,  B01J2203/0695

摘要： Type Ib synthetic diamond crystal is annealed at an annealing temperature ranging from about 1500.degree. C. to about 2200.degree. C. under a pressure which prevents significant graphitization of the diamond during the annealing to convert at least about 20% of the total amount of type Ib nitrogen present in the crystal to type Ia nitrogen.

摘要翻译： Ib型合成金刚石晶体在退火温度范围为约1500℃至约2200℃的退火温度下进行退火，该压力防止在退火期间金刚石的显着石墨化转化为总量的至少约20％ Ib存在于晶体中以形成Ia型氮。

公开(公告)号：US4073380A

公开(公告)日：1978-02-14

申请号：US705720

申请日：1976-07-15

申请人： Herbert M. Strong ,  Roy E. Tuft

发明人： Herbert M. Strong ,  Roy E. Tuft

IPC分类号： B01J3/06 ,  C01B31/06 ,  B65D25/08 ,  B65D85/70

CPC分类号： B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068 ,  Y10T117/1096

摘要： Improvements are provided in reaction vessel construction used in the growth of diamond by the process disclosed in U.S. Pat. No. 3,297,407 -- Wentorf, Jr. In assembly of the reaction vessel of this invention, the plug of catalyst-solvent material is disposed between the source of carbon and the diamond seed material as in the Wentorf, Jr. patent and, in addition, the diamond seed material is separated from the catalyst-solvent plug by means for isolating the diamond seed material from the catalyst-solvent material until after the latter has become saturated with carbon from the source of carbon. In addition, preferably the under surface of the plug of catalyst-solvent metal is covered with means for suppressing diamond nucleation. The nucleation suppressing means is usually in the form of a disc and may completely cover the underside of the catalyst-solvent plug or may have a hole therethrough in juxtaposition to the diamond seed/isolating means combination(s). When both the isolating means and the nucleation suppressing means are employed, capability is provided for simultaneously preventing dissolution of the diamond seed and suppressing spurious diamond nucleation.

摘要翻译： 通过美国专利公开的方法在用于生长金刚石的反应容器结构中提供了改进。 在本发明的反应容器的组装中，如Wentorf，Jr.专利中所述，将催化剂 - 溶剂材料的塞子置于碳源和金刚石种子材料之间，另外， 通过将金刚石种子材料与催化剂 - 溶剂材料分离直到后者已经被来自碳源的碳饱和为止，金刚石种子材料与催化剂 - 溶剂塞分离。 此外，优选地，催化剂 - 溶剂金属的塞子的下表面被用于抑制金刚石成核的装置覆盖。 成核抑制装置通常是圆盘的形式，并且可以完全覆盖催化剂 - 溶剂塞的下侧，或者可以与金刚石种子/隔离装置组合并置穿过其中的孔。 当采用隔离装置和成核抑制装置两者时，提供同时防止金刚石晶粒溶解并且抑制假金刚石成核的能力。

公开(公告)号：US4124690A

公开(公告)日：1978-11-07

申请号：US856905

申请日：1977-12-02

申请人： Herbert M. Strong ,  Richard M. Chrenko ,  Roy E. Tuft

发明人： Herbert M. Strong ,  Richard M. Chrenko ,  Roy E. Tuft

IPC分类号： B01J3/06 ,  C01B31/06

CPC分类号： C01B31/06 ,  B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068 ,  B01J2203/069 ,  B01J2203/0695

摘要： Type Ib or mixed type Ib-Ia natural diamond crystal is annealed at an annealing temperature ranging from about 1500.degree. C to about 2200.degree. C under a pressure which prevents significant graphitization of the diamond during the annealing to convert at least 20% of the total amount of type Ib nitrogen present in the crystal to type Ia nitrogen.

摘要翻译： Ib型或混合型Ib-Ia天然金刚石晶体在退火温度范围为约1500℃至约2200℃的退火温度下进行退火，该压力可防止退火期间金刚石的显着石墨化转化为总量的至少20％ I型氮存在于Ia型氮中的量。

公开(公告)号：US4034066A

公开(公告)日：1977-07-05

申请号：US412425

申请日：1973-11-02

申请人： Herbert M. Strong ,  Roy E. Tuft

发明人： Herbert M. Strong ,  Roy E. Tuft

IPC分类号： B01J3/06 ,  C01B31/06

CPC分类号： B01J3/062 ,  B01J2203/061 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/068 ,  Y10T117/1096

摘要： Improvements are provided in reaction vessel construction used in the growth of diamond by the process disclosed in U.S. Pat. No. 3,297,407 -- Wentorf, Jr. In assembly of the reaction vessel of this invention, the plug of catalyst-solvent material is disposed between the source of carbon and the diamond seed material as in the Wentorf, Jr. patent and, in addition, the diamond seed material is separated from the catalyst-solvent plug by means for isolating the diamond seed material from the catalyst-solvent material until after the latter has become saturated with carbon from the source of carbon. In addition, preferably the under surface of the plug of catalyst-solvent metal is covered with means for suppressing diamond nucleation. The nucleation suppressing means is usually in the form of a disc and may completely cover the underside of the catalyst-solvent plug or may have a hole therethrough in juxtaposition to the diamond seed/isolating means combination(s). When both the isolating means and the nucleation suppressing means are employed, capability is provided for simultaneously preventing dissolution of the diamond seed and suppressing spurious diamond nucleation.

摘要翻译： 通过美国专利公开的方法在用于生长金刚石的反应容器结构中提供了改进。 在本发明的反应容器的组装中，如Wentorf，Jr.专利中所述，将催化剂 - 溶剂材料的塞子置于碳源和金刚石种子材料之间，另外， 通过将金刚石种子材料与催化剂 - 溶剂材料分离直到后者已经被来自碳源的碳饱和为止，金刚石种子材料与催化剂 - 溶剂塞分离。 此外，优选地，催化剂 - 溶剂金属的塞子的下表面被用于抑制金刚石成核的装置覆盖。 成核抑制装置通常是圆盘的形式，并且可以完全覆盖催化剂 - 溶剂塞的下侧，或者可以与金刚石种子/隔离装置组合并置穿过其中的孔。 当采用隔离装置和成核抑制装置两者时，提供同时防止金刚石晶粒溶解并且抑制假金刚石成核的能力。