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公开(公告)号：US4231195A
公开(公告)日：1980-11-04
申请号：US42237
申请日：1979-05-24
CPC分类号： C04B35/52 , B01J3/062 , B24D3/08 , C04B35/6316 , C04B35/645 , C22C26/00 , B01J2203/062 , B01J2203/0645 , B01J2203/0655 , B01J2203/066 , B01J2203/0685 , C04B2235/3826 , C04B2235/3834 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/721 , C04B2235/77 , C04B2235/80 , C04B2235/96
摘要： An adherently bonded polycrystalline diamond body is produced by forming a charge composed of a mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy wherein the alloy is in contact or in association with hexagonal boron nitride, confining such charge within a reaction chamber, subjecting the confined charge to a pressure of at least 25 kilobars, heating the pressure-maintained charge to a temperature sufficient to melt the alloy and at which no significant graphitization of the diamond occurs whereby the alloy infiltrates through the interstices between the diamond crystals producing said body.
摘要翻译： 通过形成由大量的共晶富硅合金接触的金刚石晶体组成的电荷，其中合金与六方氮化硼接触或与六方氮化硼结合，从而将这种电荷限制在反应中 将受限制的电荷经受至少25千伏的压力，将保压的电荷加热到足以熔化合金的温度，并且在该温度下不会发生金刚石的显着石墨化，由此合金渗入金刚石晶体之间的间隙 生产身体。
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2.发明授权Silicon carbide and silicon bonded polycrystalline diamond body and method of making it 失效碳化硅和硅胶多晶金刚石体及其制作方法
公开(公告)号：US4151686A
公开(公告)日：1979-05-01
申请号：US867938
申请日：1978-01-09
CPC分类号： C04B35/645 , B01J3/062 , B22F3/26 , B24D3/08 , C04B35/52 , C04B35/6316 , C22C26/00 , B01J2203/062 , B01J2203/0635 , B01J2203/0655 , B01J2203/0685 , C04B2235/3826 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/616 , C04B2235/721 , C04B2235/728 , C04B2235/80 , C04B2235/96
摘要： A mass of diamond crystals contacting a mass of elemental silicon are confined within a pressure-transmitting medium. The resulting charge assembly is subjected to a pressure of at least 25 kilobars causing application of isostatic pressure to the contacting masses which dimensionally stabilizes them and increases the density of the mass of diamond crystals. The resulting pressure-maintained charge assembly is heated to a temperature sufficient to melt the silicon and at which no significant graphitization of the diamond occurs whereby the silicon is infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.
摘要翻译： 接触大量元素硅的大量金刚石晶体被限制在压力传递介质中。 所得到的电荷组件经受至少25千瓦的压力，从而对接触质量施加等静压，从而使它们尺寸稳定并增加金刚石晶体的质量密度。 将所得的保压电荷组件加热到足以熔化硅的温度，并且在该温度下不会发生金刚石的显着石墨化，由此硅渗透穿过金刚石晶体之间的间隙，在冷却时产生粘附的整体。
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3.发明授权Polycrystalline diamond and cemented carbide substrate and synthesizing process therefor 失效多晶金刚石和硬质合金基板及其合成工艺
公开(公告)号：US4380471A
公开(公告)日：1983-04-19
申请号：US222812
申请日：1981-01-05
申请人： Minyoung Lee , Lawrence E. Szala , Roy E. Tuft
发明人： Minyoung Lee , Lawrence E. Szala , Roy E. Tuft
CPC分类号： C04B35/645 , B01J3/062 , B22F7/06 , B24D3/06 , C04B35/52 , C04B35/6316 , C04B37/006 , C04B37/021 , C04B37/026 , B01J2203/062 , B01J2203/0635 , B01J2203/0655 , B01J2203/0685 , C04B2235/3826 , C04B2235/40 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/604 , C04B2235/616 , C04B2235/656 , C04B2235/6567 , C04B2235/80 , C04B2237/122 , C04B2237/363 , C04B2237/401 , C04B2237/60 , C04B2237/61 , C04B2237/706 , C04B2237/708
摘要： A polycrystalline diamond body infiltrated by a silicon atom-containing metal (e.g., silicon alloy) is bonded to a substrate comprising cemented carbide with a barrier of refractory material extending between the diamonds cemented together with silicon atom-containing binder and the substrate substantially precluding migration of the cementing medium (e.g., cobalt) from the carbide substrate into contact with the silicon atom-containing bonding medium in the diamond body. The process comprises subjecting a mass of diamond powder, a quantity of silicon atom-containing metal binder material, a cemented carbide body and a barrier made of material selected from the group consisting of tantalum, vanadium, molybdenum, zirconium, tungsten and alloys thereof to the simultaneous application of elevated temperature and pressure.
摘要翻译： 由含硅原子的金属（例如，硅合金）渗透的多晶金刚石体与包含硬质合金的基底结合，所述基底具有在与含硅原子的粘合剂粘合在一起的金刚石和基材之间延伸的耐火材料的屏障，基本上排除迁移 的来自碳化物衬底的固化介质（例如钴）与金刚石体中含硅原子的粘合介质接触。 该方法包括使金刚石粉末，一定数量的含硅原子的金属粘合剂材料，硬质合金体和由选自钽，钒，钼，锆，钨及其合金的材料制成的阻挡层经受一 同时应用高温和高压。
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公开(公告)号：US4234661A
公开(公告)日：1980-11-18
申请号：US19366
申请日：1979-03-12
CPC分类号： C04B41/009 , B24D3/08 , B32B18/00 , C04B35/6455 , C04B41/5002 , C04B41/85 , C04B2235/658 , C04B2235/6581 , C04B2235/6582 , C04B2237/363 , C04B2237/368 , C04B2237/60 , C04B2237/61 , C04B2237/704 , Y10T428/31504
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon nitride ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon nitride substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
摘要翻译： 与大量共晶富硅合金和氮化硅陶瓷基板接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 所得到的粉末包裹容器的基本均匀的体系被热压，从而产生流体共晶富含硅的合金，并渗入金刚石晶体之间的间隙并与氮化硅衬底的接触面接触，在冷却时， 贴合的整体复合材料。
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公开(公告)号：US4124401A
公开(公告)日：1978-11-07
申请号：US844448
申请日：1977-10-21
CPC分类号： C04B35/645 , B01J3/062 , C04B35/52 , C04B35/6316 , B01J2203/062 , B01J2203/0655 , B01J2203/0685 , B22F2005/001 , C04B2235/3826 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/427 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/721 , C04B2235/728 , C04B2235/80 , C04B2235/96
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals producing, upon cooling, an adherently bonded integral body.
摘要翻译： 与大量共晶富含硅的合金接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 将所形成的基本上均匀的粉末包封容器的等静压系统热压，从而产生流体共晶富含硅的合金，并通过金刚石晶体之间的间隙渗透，在冷却时产生粘附的整体。
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公开(公告)号：US4241135A
公开(公告)日：1980-12-23
申请号：US10748
申请日：1979-02-09
CPC分类号： C04B35/645 , B01J3/062 , B22F7/06 , B24D18/0009 , B32B18/00 , C04B35/52 , C04B35/565 , C04B35/575 , C04B35/6316 , C04B35/6455 , C04B37/001 , B01J2203/062 , B01J2203/0635 , B01J2203/0655 , B01J2203/0685 , C04B2235/3821 , C04B2235/3826 , C04B2235/383 , C04B2235/3834 , C04B2235/3839 , C04B2235/3843 , C04B2235/3847 , C04B2235/3891 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C04B2235/421 , C04B2235/422 , C04B2235/428 , C04B2235/5436 , C04B2235/5472 , C04B2235/616 , C04B2235/658 , C04B2235/6581 , C04B2235/6582 , C04B2235/721 , C04B2235/728 , C04B2235/77 , C04B2235/80 , C04B2235/96 , C04B2235/9607 , C04B2237/361 , C04B2237/363 , C04B2237/365 , C04B2237/525 , C04B2237/61 , C04B2237/704 , Y10S428/911 , Y10T428/24992 , Y10T428/26 , Y10T428/2993 , Y10T428/2995 , Y10T428/30
摘要： A mass of diamond crystals in contact with a mass of eutectiferous silicon-rich alloy and a silicon carbide ceramic substrate are disposed in a container and placed within a pressure transmitting powder medium. Pressure is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents sufficient to dimensionally stabilize the container and its contents. The resulting shaped substantially isostatic system of powder-enveloped container is hot-pressed whereby fluid eutectiferous silicon-rich alloy is produced and infiltrated through the interstices between the diamond crystals and contacts the contacting face of the silicon carbide substrate sufficiently producing, upon cooling, an adherently bonded integral composite.
摘要翻译： 与大量共晶富硅合金和碳化硅陶瓷基板接触的大量金刚石晶体设置在容器中并放置在压力传递粉末介质中。 压力被施加到粉末介质上，导致基本上均衡的压力被施加到容器及其内容物足以使容器及其内容物尺寸稳定。 将所得到的粉末包裹容器的基本均匀的体系进行热压，由此产生流体共晶富含硅的合金并渗入金刚石晶体之间的间隙并与碳化硅衬底的接触面接触，在冷却时， 贴合的整体复合材料。
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公开(公告)号：US4411566A
公开(公告)日：1983-10-25
申请号：US222786
申请日：1981-01-05
CPC分类号： B23P15/30 , C23C26/00 , C23C30/005 , Y10T407/27 , Y10T428/12583
摘要： A self-lubricating cemented carbide cutting tool of special utility in titanium machining having a copper coating bearing a film of copper iodide is provided by coating the tool with a layer of copper, heating to bond the copper to the cemented carbide and thereafter reacting the copper with iodine to form the film of desired thickness.
摘要翻译： 提供一种用于钛加工的特殊用途的自润滑硬质合金切削工具，其具有带有碘化铜膜的铜涂层，通过用铜层涂覆工具，加热以将铜结合到硬质合金，然后使铜 用碘形成所需厚度的膜。
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8.发明授权Composite of bonded cubic boron nitride crystals on a silicon carbide substrate 失效在碳化硅衬底上复合结合的立方氮化硼晶体
公开(公告)号：US4110084A
公开(公告)日：1978-08-29
申请号：US787858
申请日：1977-04-15
申请人： Minyoung Lee , Lawrence E. Szala
发明人： Minyoung Lee , Lawrence E. Szala
IPC分类号： B22F7/06 , B24D3/08 , E21B10/56 , E21B10/567 , B24D3/06
CPC分类号： E21B10/567 , B22F7/06 , B24D3/08 , B22F2999/00
摘要： A mass of cubic boron nitride(CBN) crystals, aluminum or aluminum alloy and a silicon carbide ceramic substrate are disposed in a container which is placed within a pressure-transmitting powder medium. Pressure ranging from about 20,000 psi to about 200,000 psi is applied to the powder medium resulting in substantially isostatic pressure being applied to the container and its contents. To the resulting shaped substantially-isostatic system of powder-enveloped container, heat and pressure are applied simultaneously whereby the aluminum or aluminum alloy is liquefied and infiltrated through the interstices between the CBN crystals and diffused into the contacting face of the silicon carbide substrate sufficiently to produce, upon cooling, an adherently bonded integral composite.
摘要翻译： 立方氮化硼（CBN）晶体，铝或铝合金和碳化硅陶瓷衬底的质量被放置在放置在压力传递粉末介质内的容器中。 对粉末介质施加约20,000psi至约200,000psi的压力，导致将基本上等压的压力施加到容器及其内容物上。 对于所形成的粉末包裹容器的基本均匀的系统，同时施加热和压力，由此铝或铝合金液化并渗透通过CBN晶体之间的间隙并且充分扩散到碳化硅衬底的接触面中，足以 在冷却时产生粘附的整体复合材料。
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9.发明授权High-speed metal cutting method and self-sharpening tool constructions and arrangements implementing same 失效高速金属切割方法和自动磨削工具的结构和布置实现相同
公开(公告)号：US4539875A
公开(公告)日：1985-09-10
申请号：US331341
申请日：1981-12-16
CPC分类号： B23B27/1629 , B23B2200/085 , B23B2200/125 , Y10T407/23 , Y10T407/27 , Y10T407/28 , Y10T409/300112 , Y10T82/10
摘要： A self-sharpening refractory metal cutting tool presenting an overhanging cutting portion, i.e. a flange, or ledge, of width equal to (or slightly greater than) the depth of the cut to be taken and maximum thickness equal to tolerable tool flank wear is disclosed. This tool construction has special utility in a novel high-speed cutting method in which only the tool flange does the cutting in which operation the flange is worn away with the wear progressing lengthwise of the flange during which time the flange sequentially performs a roughing cut and then a finishing cut in a single pass.
摘要翻译： 公开了一种自磨削难熔金属切削工具，其具有宽度等于（或稍大于）待切割深度的凸出切割部分，即凸缘或凸缘，并且最大厚度等于容许刀具侧面磨损 。 该工具结构在一种新型的高速切割方法中具有特殊用途，其中只有工具法兰进行切割，其中法兰被磨损的操作是随着法兰的纵向磨损而进行的，在此期间法兰顺序地进行粗切割， 然后在单程中完成裁剪。
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公开(公告)号：US4515746A
公开(公告)日：1985-05-07
申请号：US529783
申请日：1983-09-06
申请人： Milivoj K. Brun , Minyoung Lee , Lawrence E. Szala
发明人： Milivoj K. Brun , Minyoung Lee , Lawrence E. Szala
IPC分类号： C04B35/111 , C04B35/488 , C04B35/56 , C04B35/65 , C04B35/60
CPC分类号： C04B35/645 , C04B35/111 , C04B35/488 , C04B35/5607 , C04B35/5611 , C04B35/5622 , C04B35/563 , C04B35/65
摘要： A particulate mixture of ceramic powder, free carbon and a hydride of a metal selected from the group consisting of hafnium, niobium, tantalum, titanium, vanadium, zirconium and mixtures thereof is hot pressed decomposing the hydride and reacting the resulting metal with carbon producing a polycrystalline microcomposite comprised of a continuous phase of the carbide of the metal which encapsulates at least about 20% by volume of the ceramic particles and which either encapsulates or is intermixed with the balance of said ceramic particles.
摘要翻译： 将陶瓷粉末，游离碳和选自铪，铌，钽，钛，钒，锆及其混合物的金属的氢化物的颗粒混合物热压分解氢化物并使所得金属与碳反应，产生 多晶微复合材料包括金属碳化物的连续相，其包封至少约20体积％的陶瓷颗粒，并且其包封或与所述陶瓷颗粒的余量混合。
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