发明授权
- 专利标题： PNPN Semiconductor switches
- 专利标题（中）： PNPN半导体开关
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申请号： US96165申请日： 1979-11-20
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公开(公告)号： US4244000A公开(公告)日： 1981-01-06
- 发明人: Jun Ueda , Haruo Mori , Kazuo Hagimura , Kotaro Kato
- 申请人： Jun Ueda , Haruo Mori , Kazuo Hagimura , Kotaro Kato
- 申请人地址： JPX Tokyo JPX Tokyo
- 专利权人： Nippon Telegraph and Telephone Public Corporation,Oki Electric Industry Company, Ltd.
- 当前专利权人： Nippon Telegraph and Telephone Public Corporation,Oki Electric Industry Company, Ltd.
- 当前专利权人地址： JPX Tokyo JPX Tokyo
- 优先权： JPX53/146058 19781128
- 主分类号： H01L27/144
- IPC分类号： H01L27/144 ; H01L29/10 ; H01L29/74 ; H01L29/747 ; H01L29/749 ; H01L31/111 ; H03K17/082 ; H03K17/725
摘要：
A circuit for preventing a dV/dt erroneous operation of a PNPN semiconductor switch is replaced by a capacitance on the surface of a semiconductor substrate, a high resistance gate electrode. In other words, such a circuit is formed on the surface of the substrate by a slight modification of the basic design without decreasing the chip area and without isolating component elements.
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