发明授权
- 专利标题： Epitaxial wafer for use in production of light emitting diode
- 专利标题（中）： 用于生产发光二极管的外延晶片
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申请号： US55377申请日： 1979-07-06
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公开(公告)号： US4252576A公开(公告)日： 1981-02-24
- 发明人: Shinichi Hasegawa , Hisanori Fujita
- 申请人： Shinichi Hasegawa , Hisanori Fujita
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Monsanto Chemical Co.
- 当前专利权人： Mitsubishi Monsanto Chemical Co.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX53/82739 19780707
- 主分类号： C30B25/02
- IPC分类号： C30B25/02 ; C30B29/42 ; H01L21/205 ; H01L33/16 ; H01L33/30 ; H01L33/34 ; H01L29/12 ; H01L21/20
摘要：
An epitaxial wafer of GaAs.sub.1-x P.sub.x has been doped with nitrogen and used for the production of light emitting diode (LED). The carrier concentration of the conventional GaAs.sub.1-x P.sub.x was from 3.times.10.sup.16 to 2.times.10.sup.17 /cm.sup.3.According to the present invention, the carrier concentration is reduced lower than the conventional concentration and the luminance of LED is increased approximately two or three times the conventional luminance.
公开/授权文献
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