发明授权
- 专利标题： Infrared radiation detecting apparatus and method of manufacturing
- 专利标题（中）： 红外辐射检测装置及其制造方法
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申请号： US31048申请日： 1979-04-18
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公开(公告)号： US4293768A公开(公告)日： 1981-10-06
- 发明人: Hideo Adachi , Kiichi Minai , Kozo Moriyasu , Shunjiro Imagawa
- 申请人： Hideo Adachi , Kiichi Minai , Kozo Moriyasu , Shunjiro Imagawa
- 申请人地址： JPX
- 专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人： Murata Manufacturing Co., Ltd.
- 当前专利权人地址： JPX
- 优先权： JPX53-50373 19780426
- 主分类号： G01J5/02
- IPC分类号： G01J5/02 ; G01J5/34 ; H01L25/16 ; H01L37/02 ; H04N5/33 ; G01J1/00 ; H04N9/27
摘要：
An infrared radiation sensing device such as a pyroelectric effect device is mounted on one surface of an insulating substrate of alumina ceramic or the like. External connection leads are provided on the insulating substrate. A field effect transistor is provided on the other surface of the insulating substrate for amplifying the signal generated in the sensing device by incident infrared radiation. The apparatus is suitably encapsulated in a layer of resin.
公开/授权文献
- USD363085S Electronic study guide unit 公开/授权日：1995-10-10
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