摘要:
An outer sheath for an electronic device which includes an electronic element is formed by placing a thermosetting resin on the outer surface of the electronic element to form a first thermosetting resin layer, placing a thermoplastic resin on the outer surface of the first thermosetting resin layer to form a thermoplastic layer and placing a thermosetting resin layer on the thermoplastic layer to form a second thermosetting resin layer. All three layers are then heated so as to cure the first and second thermosetting resin layers and to cause the thermoplastic layer to melt and form a non-porous layer which is subsequently solidified.
摘要:
An electronic device 1 includes an electronic element 3 having an outer sheath 5 covering at least substantially the entire outer surface of the electronic element. The outer sheath 5 has three layers: a first thermoplastic layer 5a formed on at least substantially the entire outer surface of the electronic element; a thermoplastic resin layer 5a formed on at least substantially the entire outer surface of the first thermosetting layer 5a, and a second thermoplastic resin layer 5b formed on at least substantially the entire outer surface of the thermoplastic layer. The outer sheath is formed by placing an uncured thermosetting resin on the outer surface of the electronic element to form the first thermosetting resin layer placing an uncured thermosetting resin on the outer surface of the first thermosetting resin layer to form the thermoplastic layer and placing an uncured thermosetting resin layer on the thermoplastic layer to form the second thermosetting resin layer. All three layers are then heated so as to cure the first and second thermosetting resin layer and to cause the thermoplastic layer to melt and form a non-porous layer which is subsequently solidified.
摘要:
An infrared radiation sensing device such as a pyroelectric effect device is mounted on one surface of an insulating substrate of alumina ceramic or the like. External connection leads are provided on the insulating substrate. A field effect transistor is provided on the other surface of the insulating substrate for amplifying the signal generated in the sensing device by incident infrared radiation. The apparatus is suitably encapsulated in a layer of resin.