Invention Grant
- Patent Title: Semiconductor integrated circuit interconnections
- Patent Title (中): 半导体集成电路互连
-
Application No.: US298551Application Date: 1981-09-02
-
Publication No.: US4364166APublication Date: 1982-12-21
- Inventor: Billy L. Crowder , Arnold Reisman
- Applicant: Billy L. Crowder , Arnold Reisman
- Applicant Address: NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: NY Armonk
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/336 ; H01L23/29 ; H01L23/31 ; H01L23/522 ; H01L23/532 ; H01L27/108 ; H01L29/49 ; H01L21/225
Abstract:
An improved interconnection for semiconductor integrated circuits is provided by a member made of doped polycrystalline silicon and metal silicide that provides the simultaneous advantages of high conductivity and reduced overlap capacitance in multilayer integrated circuit devices. Such interconnecting members are useable to produce field effect transistor type devices.
Public/Granted literature
- US5448191A Frequency synthesizer using noninteger division and phase selection Public/Granted day:1995-09-05
Information query
IPC分类:
