Charge-transfer switched-capacity filter

Invention Grant

US4365217A Charge-transfer switched-capacity filter 失效

Title translation: 电荷转移开关容量滤波器

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Patent Title: Charge-transfer switched-capacity filter
Patent Title (中): 电荷转移开关容量滤波器
Application No.: US210141

Application Date: 1980-11-24
Publication No.: US4365217A

Publication Date: 1982-12-21
Inventor: Jean L. Berger , Jean L. Coutures
Applicant: Jean L. Berger , Jean L. Coutures
Applicant Address: FRX Paris
Assignee: Thomson-CSF
Current Assignee: Thomson-CSF
Current Assignee Address: FRX Paris
Priority: FRX7929506 19791130
Main IPC: H01L21/822
IPC: H01L21/822 ; H01L27/04 ; H03H15/02 ; H03H19/00 ; G11C27/02

Charge-transfer switched-capacity filter

Abstract:

A switched capacity filter having capacities formed by MOS technology on a semiconductor substrate. The connection between two capacities whose first plates are formed by the semiconductor substrate are periodically connected by providing transfer of charges in the substrate on which these two capacities are integrated. The external or other plate of each capacity receives, the input voltage, or a reference voltage, or the surface potential under another capacity which is provided by a reinjection and reading device formed from a diode and a voltage follower stage.

Abstract(Chinese):

一种具有通过MOS技术在半导体衬底上形成的容量的开关电容滤波器。通过在其上集成有这两个容量的基板中提供电荷的转移，周期性地连接由第一板由半导体基板形成的两个电容之间的连接。每个容量的外部或其他板接收由二极管和电压跟随器级形成的再注入和读取装置提供的另一容量下的输入电压或参考电压或表面电位。

Public/Granted literature

US6154608A Dry element water heater Public/Granted day:2000-11-28

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）