Abstract:
When the capacitance of the conductive columns of the line-transfer photosensitive device is higher than that of the photosensitive elements and of the read register, use is made of a reading circuit provided in the case of each conductive column with a plurality of charge storage capacitors separated by an MOS transistor. These MOS transistors operate in the saturating mode and pass signal charges derived from each conductive column from one capacitor to the next up to the read register. The storage capacitors have decreasing values as the distance from the read register becomes shorter. Transfer of the signal charges is accompanied by transfer of polarization charge quantities which decrease in value as the distance from the register becomes shorter. Once the transfer operations have been performed, these quantities of polarization charges are returned to their initial capacitors.
Abstract:
The present invention pertains to a large-sized X-ray photography panel. This panel comprises several modules placed end to end. Each module comprises a network of photosensitive detectors with the same number of columns as the panels but with a smaller number of rows. Each module has its own addressing and reading means. The addressing means are located on an edge of the insulating substrate that bears the detectors. The reading means are located on the other side of the substrate from the detectors. A screen, which is opaque to the radiation to be detected, is interposed between the substrate and these means. These means are liked to the column connections coming from the opposite side of the substrate by connections along one of the side surfaces of the substrate.
Abstract:
A method for reading a photosensitive element having a photodiode and a capacitor as applicable in particular to reading a low-level analog signals consists in introducing a biasing charge background, for example by means of calibrated uniform illumination prior to each read operation in order to cause forward biasing of the photodiode substantially beyond its knee voltage at the time of application of a control read pulse which reliably restores the voltage at the photodiode terminals to the knee voltage value, the current during the read operation being such that all the charges are then reliably transmitted via the capacitor to the integrating read amplifier.
Abstract:
This analog-ditigal coder determines the coefficients a.sub.o . . . a.sub.n in two stages:during the first stage, the generator processes voltages V.sub.R and V.sub.Ri with i=1 to k-1;during the second stage, the generator processes the voltages V.sub.R and V.sub.Ri with i=1 to n-k.A capacitive voltage divider (2.sup.k C, C) preceded by two sample and hold means (S.sub.3, C.sub.3, S.sub.4, C.sub.4) assures the division by 2.sup.k of the voltages processed during the second stage and their summation with the final voltage V.sub.R(k-1) produced during the first stage.
Abstract:
The process more particularly comprises introducing beneath the final storage capacitor C.sub.6 a quantity of charges equal to that located there during the processing of the preceding sample of the input signal, prior to the beginning of charge transfer from said capacitors to the means which convert the charges into a voltage, and distributing the charges between said capacitor and the preceding capacitor as a function of the capacitance values. The switched capacitor filter more particularly comprises, when it is looped, a circuit R permitting the application to the looping capacitor C.sub.4 of a voltage V.sub.g +.DELTA.V.sub.s, while the foils of the other storage capacitors of the filter are connected to the voltage V.sub.g.
Abstract:
In a matrix array of photosensitive elements, each photosensitive point is provided with a photosensitive element (pin photodiode) in series with a capacitor between a row lead and a column lead. It is proposed to make use of a simplified photosensitive element in which an end semiconductor layer is suppressed such as, for example, the n-layer of a pin photodiode or the n-layer of a five-layer phototransistor of the nipin type. The dielectric of the capacitor then comes directly into contact with an intrinsic semiconductor layer in which electrons accumulate. These electrons reconstitute the equivalent of an n-type doped layer.
Abstract:
An improved line-transfer photosensitive device and particularly a device which operates with a double drive charge comprises on at least one semiconductor substrate a photosensitive region made up of M lines of N photosensitive points. The photosensitive points of the different lines are connected in parallel by means of conductive columns to a line memory which carries out at least the transfer of the signal charges integrated on any one line of the phtosensitive region to a read register consisting of a charge-coupled shift register of the volume transfer type. The line memory is formed on a semiconductor substrate region having an impurity implantation of opposite type with respect to the substrate in order to produce a volume charge transfer. The region in which the line memory is formed has a dopant concentration which is lower than or equal to that of the region in which the shift register is formed.
Abstract:
The invention provides a matrix of photosensitive elements in which each photosensitive element is reduced to the association of a diode and a capacity. The method for manufacture thereof is therefore easy particularly from amorphous silicon. The method for reading same uses multiplexed reading of the columns: the n columns are distributed in groups of n/M successive columns controlled simultaneously by M horizontal shift registers, each associated with a reading integrator. To ensure correct reading of the useful signal, whatever their level, the level of the voltages at the terminals of the diodes of the photosensitive elements is reset so that the starting voltage at the beginning of each reading pulse applied to a line is such that only this pulse, and even with a maximum useful illumination signal, can bias the diode forwardly, and so that with a column addressing pulse, the diode is biased forwardly even in the absence of the useful signal.
Abstract:
The storage electrodes are electrically connected at a point. A reference charge quantity is stored beneath the first storage electrode when the point is at a constant potential and before charges pass beneath the second storage electrode. When a charge quantity arrives beneath the second storage electrode and when the point is floating, the surface potential beneath the first storage electrode is maintained constant and a charge quantity is transferred from the first storage electrode to a third storage electrode.
Abstract:
The filter has p stages, p being the number of bits on which are expressed the digital filtering coefficients. Each of the stages has a charge transfer shift register, called the signal register, receiving the analog signal E(t) to be filtered and a charge transfer shift register, called the coefficient register, receiving the M bits of the same weight of the M filtering coefficients. The filter also has an operator which multiplies the signal E(t) by each of the M filtering coefficients and then summates these various products to supply the output signal S(t) of the filter.