利索-全球专利检索

  1. 登录
  2. 注册
发明授权
US4397938A Method of forming resist patterns using X-rays or electron beam 失效
使用X射线或电子束形成抗蚀剂图案的方法

Method of forming resist patterns using X-rays or electron beam
摘要：
In accordance with this invention, there is provided a positive resist medium for microlithography which is comprised of a film of a copolymer of sulfur dioxide and certain vinyl esters. A method of manufacturing microelectronic circuits and recording information utilizing the resist medium of this invention is also provided.
摘要（中）：

根据本发明，提供了一种用于微光刻的正性抗蚀剂介质，其由二氧化硫和某些乙烯基酯的共聚物的膜组成。 还提供了利用本发明的抗蚀剂介质制造微电子电路和记录信息的方法。

公开/授权文献
信息查询
Global Dossier Espacenet
0/0