发明授权
- 专利标题: Film forming process utilizing discharge
- 专利标题(中): 使用放电的成膜工艺
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申请号: US412076申请日: 1982-08-27
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公开(公告)号: US4404076A公开(公告)日: 1983-09-13
- 发明人: Katsumi Nakagawa , Tadaji Fukada
- 申请人: Katsumi Nakagawa , Tadaji Fukada
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX53-165848 19781228
- 主分类号: C23C16/50
- IPC分类号: C23C16/50 ; B05D7/00 ; B05D7/24 ; C23C16/509 ; G03G5/08 ; H01L21/205 ; C23C13/08 ; C23C11/00
摘要:
A film forming process comprising introducing gas for forming a film from an inlet part for gas into a pressure-reducible deposition chamber wherein a substrate for forming a film thereon is supported by a fixing member, at least one of said substrate and fixing member are used so as to act as a first electrode, at least one portion of the wall of said deposition chamber is employed so as to act as a second electrode, the surface of said second electrode is arranged substantially in parallel to the surface for forming a film thereon, of said substrate, and said inlet part for gas and an outlet part for gas are arranged substantially in the positional relationship of rotation symmetry; and generating a glow discharge in said deposition chamber, thereby forming a film on said substrate.
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