公开(公告)号：US4404076A

公开(公告)日：1983-09-13

申请号：US412076

申请日：1982-08-27

申请人： Katsumi Nakagawa ,  Tadaji Fukada

发明人： Katsumi Nakagawa ,  Tadaji Fukada

IPC分类号： C23C16/50 ,  B05D7/00 ,  B05D7/24 ,  C23C16/509 ,  G03G5/08 ,  H01L21/205 ,  C23C13/08 ,  C23C11/00

CPC分类号： B05D1/62 ,  B05D7/24 ,  C23C16/5093 ,  B05D7/56

摘要： A film forming process comprising introducing gas for forming a film from an inlet part for gas into a pressure-reducible deposition chamber wherein a substrate for forming a film thereon is supported by a fixing member, at least one of said substrate and fixing member are used so as to act as a first electrode, at least one portion of the wall of said deposition chamber is employed so as to act as a second electrode, the surface of said second electrode is arranged substantially in parallel to the surface for forming a film thereon, of said substrate, and said inlet part for gas and an outlet part for gas are arranged substantially in the positional relationship of rotation symmetry; and generating a glow discharge in said deposition chamber, thereby forming a film on said substrate.

摘要翻译： 一种成膜方法，包括将用于形成气体的气体从气体入口部分导入可降压沉积室，其中用于在其上形成膜的基板由固定构件支撑，使用所述基板和固定构件中的至少一个 为了充当第一电极，使用所述沉积室的壁的至少一部分作为第二电极，所述第二电极的表面基本上平行于用于在其上形成膜的表面布置 ，所述基板的所述入口部和所述气体用的出口部大致呈旋转对称的位置关系， 并在所述沉积室中产生辉光放电，从而在所述衬底上形成膜。