Invention Grant
- Patent Title: Apparatus and process for production of amorphous semiconductor
- Patent Title (中): 用于生产非晶半导体的装置和方法
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Application No.: US222168Application Date: 1980-12-16
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Publication No.: US4406765APublication Date: 1983-09-27
- Inventor: Akio Higashi , Kazuhiro Kawaziri , Jin Murayama
- Applicant: Akio Higashi , Kazuhiro Kawaziri , Jin Murayama
- Applicant Address: JPX Kanagawa
- Assignee: Fuji Photo Film Co., Ltd.
- Current Assignee: Fuji Photo Film Co., Ltd.
- Current Assignee Address: JPX Kanagawa
- Priority: JPX55-9102 19800128
- Main IPC: H01L31/04
- IPC: H01L31/04 ; C23C16/50 ; C23C16/515 ; G03G5/08 ; H01J37/32 ; H01L21/205 ; H01L21/316 ; C01B33/02 ; C23C11/00
Abstract:
A process for producing an amorphous semiconductor membrane. A predetermined gas is introduced into a vacuum chamber which is decomposed by a discharge phenomenon. The discharge phenomenon is caused by an electric field made up of a high frequency electric field or pulsed electric field superposed on a DC electric field.
Public/Granted literature
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