公开(公告)号：US4231808A

公开(公告)日：1980-11-04

申请号：US72817

申请日：1979-09-05

Applicant: Masatoshi Tabei ,  Kazuhiro Kawaziri ,  Yosuke Nakajima

Inventor： Masatoshi Tabei ,  Kazuhiro Kawaziri ,  Yosuke Nakajima

IPC: H01L31/04 ,  H01L31/0224 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/022466 ,  H01L31/068 ,  H01L31/1828 ,  Y02E10/543 ,  Y02E10/547

Abstract: An improved type of thin film photovoltaic cell can be produced by forming a thin layer of n-type CdTe up to 2 micron thick on a conductive support, heat-treating the CdTe layer at 80.degree. to 210.degree. C. for 20 to 180 minutes, and providing on the free surface of the heat-treated CdTe layer a transparent electrode.

Abstract translation: 可以通过在导电载体上形成高达2微米厚的n型CdTe的薄层，在80〜210℃下热处理20〜180分钟来制造改进型的薄膜光伏电池 并且在热处理的CdTe层的自由表面上提供透明电极。

公开(公告)号：US3996057A

公开(公告)日：1976-12-07

申请号：US643653

申请日：1975-12-23

Applicant: Kazuhiro Kawaziri ,  Yuzo Mizobuchi ,  Takeshi Tomotsu

Inventor： Kazuhiro Kawaziri ,  Yuzo Mizobuchi ,  Takeshi Tomotsu

IPC: G03C1/705 ,  G03C5/24

CPC classification number: G03C1/705

Abstract: A method for forming an image, which comprises subjecting an image-recording material comprising a metal layer and an inorganic material layer to imagewise exposure by application of electromagnetic radiation, and then heating the exposed material to cause a thermal doping of the unexposed area of the metal layer. This method permits the formation of negative-positive type images. The product finds a wide range of valuable industrial applications, for example, as an ordinary image-recording material, laser recording material, electron beam recording material or microrecording material, and also for producing a print-wiring plate, relief metal plate for relief and lithographic printing, or a master for electrostatic printing.

Abstract translation: 一种用于形成图像的方法，其包括通过施加电磁辐射对包含金属层和无机材料层的图像记录材料进行成像曝光，然后加热所暴露的材料以引起所述未曝光区域的热掺杂 金属层。 该方法允许形成负 - 正型图像。 该产品具有广泛的有价值的工业应用，例如作为普通的图像记录材料，激光记录材料，电子束记录材料或微记录材料，并且还用于制造印刷布线板，用于浮雕的浮雕金属板 平版印刷或用于静电印刷的母版。

公开(公告)号：US4297392A

公开(公告)日：1981-10-27

申请号：US90721

申请日：1979-11-02

Applicant: Akio Higashi ,  Kazuhiro Kawaziri ,  Yosuke Nakajima

Inventor： Akio Higashi ,  Kazuhiro Kawaziri ,  Yosuke Nakajima

IPC: G03G5/08 ,  G03G5/082 ,  H01L31/0248 ,  H01L31/09 ,  H01L31/20

CPC classification number: H01L31/202 ,  G03G5/08235 ,  G03G5/08278 ,  H01L31/095 ,  Y02E10/50 ,  Y02P70/521

Abstract: In the course of producing a thin film of amorphous silicon by high frequency sputtering elemental silicon under an atmosphere containing at least hydrogen gas, the temperature of the base plate onto which the amorphous silicon is deposited is maintained at a temperature of about 50.degree. C. to 150.degree. C. The thus obtained silicon film possesses not only photoconductivity sufficient for use as a photoconductor but also a large difference between photoconductivity and dard conductivity. In addition, a photoconductor of an amorphous silicon thin film can be produced at low cost without environmental pollution problems.

Abstract translation: 在至少包含氢气的气氛下，通过高频溅射元素硅制造非晶硅薄膜的过程中，将非晶硅沉积在其上的基板的温度保持在约50℃的温度。 由此获得的硅膜不仅具有足够的光电导度用作光电导体，而且具有光电导率和导电性之间的大的差异。 此外，可以低成本地制造非晶硅薄膜的感光体，而不会产生环境污染问题。

公开(公告)号：US4406765A

公开(公告)日：1983-09-27

申请号：US222168

申请日：1980-12-16

Applicant: Akio Higashi ,  Kazuhiro Kawaziri ,  Jin Murayama

Inventor： Akio Higashi ,  Kazuhiro Kawaziri ,  Jin Murayama

IPC: H01L31/04 ,  C23C16/50 ,  C23C16/515 ,  G03G5/08 ,  H01J37/32 ,  H01L21/205 ,  H01L21/316 ,  C01B33/02 ,  C23C11/00

CPC classification number: H01J37/32082 ,  C23C16/515 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

Abstract: A process for producing an amorphous semiconductor membrane. A predetermined gas is introduced into a vacuum chamber which is decomposed by a discharge phenomenon. The discharge phenomenon is caused by an electric field made up of a high frequency electric field or pulsed electric field superposed on a DC electric field.

Abstract translation: 一种非晶半导体膜的制造方法。 将预定的气体引入由放电现象分解的真空室中。 放电现象是由叠加在直流电场上的高频电场或脉冲电场构成的电场引起的。

公开(公告)号：US5929784A

公开(公告)日：1999-07-27

申请号：US916743

申请日：1997-08-19

Applicant: Kazuhiro Kawaziri ,  Hideo Shimizu

Inventor： Kazuhiro Kawaziri ,  Hideo Shimizu

IPC: B60W30/00 ,  B60Q1/50 ,  G01C3/06 ,  G01S11/12 ,  G01S17/93 ,  G05D1/02 ,  G06T1/00 ,  G08G1/16 ,  G08B1/00

CPC classification number: G01S17/936 ,  B60Q1/50 ,  G01S11/12

Abstract: A device for determining the distance between vehicles according to this invention is used with a vehicle for determining the distance to a vehicle ahead of the device-equipped vehicle moving on a traffic lane defined by lines drawn on a road. The device comprises a pair of light receivers each having at least one light sensor array, a line detector for detecting images at points at which the quantity of light takes maximum values on the light sensor array of at least one of the light receivers as the lines and providing an output signal representing the positions of the lines, a measuring range detector responsive to the output signal of the line detector for detecting a range of the traffic lane on which the device-equipped vehicle is moving; and a distance detector for determining the distance to the vehicle ahead on the basis of positions where an image of the vehicle ahead is formed on the light sensor array within the range of the traffic lane detected by the measuring range detector.

Abstract translation: 根据本发明的用于确定车辆之间的距离的装置与用于确定在由在道路上绘制的线限定的行车道上移动的装备装备的车辆之前的车辆的距离的车辆一起使用。 该装置包括一对光接收器，每个光接收器具有至少一个光传感器阵列，线检测器，用于在至少一个光接收器的光传感器阵列上以最大值获取最大值的点处检测图像，作为线 以及提供表示所述线路的位置的输出信号;响应于所述线路检测器的输出信号的测量范围检测器，用于检测所述装备车辆运动的行车道的范围; 以及距离检测器，其基于由所述测量范围检测器检测的所述行车道的范围内的所述光传感器阵列上的前方的图像的图像的位置，确定与前方的车辆的距离。

公开(公告)号：US4356246A

公开(公告)日：1982-10-26

申请号：US159566

申请日：1980-06-16

Applicant: Masatoshi Tabei ,  Keiji Takeda ,  Kazuhiro Kawaziri ,  Akio Higashi

Inventor： Masatoshi Tabei ,  Keiji Takeda ,  Kazuhiro Kawaziri ,  Akio Higashi

IPC: G03G5/043 ,  G03G5/08 ,  G03G5/087 ,  G03G5/082

CPC classification number: G03G5/087 ,  G03G5/0436 ,  G03G5/08

Abstract: A noncrystalline silicon powder having excellent photoconductivity is described, comprising silicon and hydrogen, exhibiting an infrared absorption spectrum characterized by absorption peaks centered at about 2000 cm.sup.-1 and 630 cm.sup.-1, wherein the height of the absorbance peak at 2000 cm.sup.-1 is at least one-tenth the height of the peak centered at 630 cm.sup.-1, and exhibiting a spin density of not more than 10.sup.18 cm.sup.-3 determined by electron spin resonance spectroscopy; the noncrystalline silicon powder is used as highly efficient photoconductor in photoconductive compositions utilized for the production of electrophotographic photoreceptors.

Abstract translation: 描述了具有优异光电导性的非晶硅粉末，其包含硅和氢，表现出红外吸收光谱，其特征在于以约2000cm -1和630cm -1为中心的吸收峰，其中2000cm -1处的吸收峰的高度为 以630cm -1为中心的峰的高度的至少十分之一，并且通过电子自旋共振光谱确定的自旋密度不大于1018cm-3; 非晶硅粉末用作用于生产电子照相感光体的光电导组合物中的高效光电导体。

公开(公告)号：US4296422A

公开(公告)日：1981-10-20

申请号：US6022

申请日：1979-01-24

Applicant: Kazuhiro Kawaziri ,  Masato Fujiwara ,  Isamu Hatanaka ,  Masatoshi Tabei ,  Akio Higashi ,  Mitsuharu Nirasawa

Inventor： Kazuhiro Kawaziri ,  Masato Fujiwara ,  Isamu Hatanaka ,  Masatoshi Tabei ,  Akio Higashi ,  Mitsuharu Nirasawa

IPC: B41M5/20 ,  G03G17/02 ,  G01D15/14 ,  G03G15/00

CPC classification number: G03G17/02 ,  B41M5/20

Abstract: An image is recorded on the recording layer of an image recording material by exposing the photoconductor thereof to imagewise light and applying a voltage there-across. The image recording material is composed of(a) a recording medium consisting of a support base at least one surface of which is electrically conductive and a recording layer provided on the electrically conductive surface of the support base containing an oxidizable or reducible compound, and(b) a photoconductor disposed in contact with the surface of the recording layer.The photoconductor has a specific resistance of not more than 10.sup.9 .OMEGA.cm and causes the effect of electric rectification at the boundary between itself and the recording layer.

Abstract translation: 通过将图像记录材料的光电导体曝光成图像光并在其上施加电压，将图像记录在图像记录材料的记录层上。 图像记录材料由（a）由支撑基底组成的记录介质，该支撑基底的至少一个表面是导电的，并且记录层设置在载体基底的含有可氧化或还原化合物的导电表面上，和 b）设置成与记录层的表面接触的光电导体。 光电导体的电阻不大于10欧姆·厘米，并且在其与记录层之间的边界处引起电整流的影响。