A method of fabricating lines of submicron width, comprising the steps of:providing a substrate,depositing a first layer of metal upon the substrate;spinning a photoresist layer on the metal;patterning the photoresist layer;etching the metal to undercut the photoresist edge, e.g. with a mixture for approximately ten minutes at room temperature;depositing a second layer of metal at an angle .theta..sub.1 to the photoresist edge, thereby defining a long, submicron-wide opening to the underlying substrate;depositing a chosen material, for example, metallic or semiconductor, for the bridge onto the substrate at an angle of .theta..sub.2 through the submicron-wide opening; andremoving undesired material surrounding the bridge by dissolving the photoresist in hot acetone followed by stripping the remaining two layers of metal with etchant.