发明授权
- 专利标题： High-breakdown-voltage resistance element for integrated circuit with a plurality of multilayer, overlapping electrodes
- 专利标题（中）： 具有多个多层重叠电极的集成电路的高耐击穿电压元件
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申请号： US156015申请日： 1980-06-03
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公开(公告)号： US4423433A公开(公告)日： 1983-12-27
- 发明人: Ichiro Imaizumi , Shikayuki Ochi , Masatoshi Kimura , Masayoshi Yoshimura , Takashi Yamaguchi , Toyomasa Koda
- 申请人： Ichiro Imaizumi , Shikayuki Ochi , Masatoshi Kimura , Masayoshi Yoshimura , Takashi Yamaguchi , Toyomasa Koda
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX54-68972 19790604
- 主分类号： H01L27/04
- IPC分类号： H01L27/04 ; H01L21/822 ; H01L29/41 ; H01L29/8605 ; H01L27/02
摘要：
A high-breakdown-voltage resistance element comprises a semiconductor body, an impurity layer disposed in a surface region of the semiconductor body to provide a resistor body, a first electrode connected to one end of the resistor body through a contact hole in a first insulating film formed on the surface of the semiconductor body, and a second electrode connected to the other end of the resistor body through another contact hole in the insulating film. A second insulating film is formed on the first and second electrodes, and a third electrode is connected to the first electrode through a contact hole in the second insulating film, so that the entire surface of the resistor body and adjacent areas are covered with the first, second and third electrodes.