Invention Grant
US4433253A Three-phase regulated high-voltage charge pump 失效
三相调压高压电荷泵

Three-phase regulated high-voltage charge pump
Abstract:
An internal bias generator for providing a negative bias voltage to the substrate of an MOS integrated circuit at a magnitude higher than the power supply voltage includes a pump circuit which comprises a plurality of switches which are sequentially actuated by nonoverlapping clock signals to alternately charge and discharge a capacitor. The clock signals are produced by a generator which includes a series of RC-delay inverting amplifier stages coupled to a series of NOR gates. The bias generator further comprises a threshold-sensitive regulator which uses the source-body effect of substrate bias on the threshold voltage of an MOS FET to control the magnitude of the applied bias voltage. When the sensed threshold voltage deviates from a desired level, certain of the clock signals are disabled, thereby to modify the bias voltage applied to the substrate in a manner to tend to restore the threshold voltage to its desired level.
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