Invention Grant
- Patent Title: Three-phase regulated high-voltage charge pump
- Patent Title (中): 三相调压高压电荷泵
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Application No.: US329591Application Date: 1981-12-10
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Publication No.: US4433253APublication Date: 1984-02-21
- Inventor: John M. Zapisek
- Applicant: John M. Zapisek
- Applicant Address: NY Hauppauge
- Assignee: Standard Microsystems Corporation
- Current Assignee: Standard Microsystems Corporation
- Current Assignee Address: NY Hauppauge
- Main IPC: G05F3/20
- IPC: G05F3/20 ; H03K5/15 ; H03L5/00 ; H03K17/687
Abstract:
An internal bias generator for providing a negative bias voltage to the substrate of an MOS integrated circuit at a magnitude higher than the power supply voltage includes a pump circuit which comprises a plurality of switches which are sequentially actuated by nonoverlapping clock signals to alternately charge and discharge a capacitor. The clock signals are produced by a generator which includes a series of RC-delay inverting amplifier stages coupled to a series of NOR gates. The bias generator further comprises a threshold-sensitive regulator which uses the source-body effect of substrate bias on the threshold voltage of an MOS FET to control the magnitude of the applied bias voltage. When the sensed threshold voltage deviates from a desired level, certain of the clock signals are disabled, thereby to modify the bias voltage applied to the substrate in a manner to tend to restore the threshold voltage to its desired level.
Public/Granted literature
- US5476760A Photographic emulsions of enhanced sensitivity Public/Granted day:1995-12-19
Information query
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