发明授权
- 专利标题： Oxynitride film and its manufacturing method
- 专利标题（中）： 氧氮化膜及其制造方法
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申请号： US351619申请日： 1982-02-24
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公开(公告)号： US4436770A公开(公告)日： 1984-03-13
- 发明人: Jun-ichi Nishizawa , Ikuo Shiota
- 申请人： Jun-ichi Nishizawa , Ikuo Shiota
- 申请人地址： JPX Sendai
- 专利权人： Budda Hajia Handotai Kenkyu Shinkokai
- 当前专利权人： Budda Hajia Handotai Kenkyu Shinkokai
- 当前专利权人地址： JPX Sendai
- 优先权： JPX53-38580 19780401; JPX53-86573 19780714
- 主分类号： C23C14/06
- IPC分类号： C23C14/06 ; C23C16/30 ; H01L21/28 ; H01L21/314 ; H01L29/51 ; H01L29/94 ; B05D5/00 ; C23C11/00 ; C23C15/00
摘要：
The oxynitride film according to the present invention contains Ga and/or Al and has O/N ratio of at least 0.15. This film is obtained by relying on, for example, chemical vapor deposition technique. The O/N ratio in the film may be varied by, for example, varying the distance between the substrate and the substance-supply source, or by varying the proportion of an oxidizing gas contained in a carrier gas. This film is used either as a surface passivation film of III-V compound semiconductors such as GaAs, or as an insulating film for active surface portions of IG-FET, or as an optical anti-reflective film.
公开/授权文献
- US5495673A Knife with detachable support 公开/授权日：1996-03-05
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